DOI: 10.1126/science.280.5370.1741. Integrated Optoelectronic Devices Based on Conjugated Polymers

Integrated Optoelectronic Devices Based on Conjugated Polymers

10.1126/science.280.5370.1741

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor (FET) driving a polymer light-emitting diode (LED) of similar size. The FET uses regioregular poly(hexylthiophene). Its performance approaches that of inorganic amorphous silicon FETs, with field-effect mobilities of 0.05 to 0.1 square centimeters per volt second and ON-OFF current ratios of >10 6 . The high mobility is attributed to the formation of extended polaron states as a result of local self-organization, in contrast to the variable-range hopping of self-localized polarons found in more disordered polymers. The FET-LED device represents a step toward all-polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.

Bibliography

Sirringhaus, H., Tessler, N., & Friend, R. H. (1998). Integrated Optoelectronic Devices Based on Conjugated Polymers. Science, 280(5370), 1741â1744.

Authors 3

Henning Sirringhaus (first)
Nir Tessler (additional)
Richard H. Friend (additional)

References 24 Referenced 2,529

Tessler N., Harrison N. T., Friend R. H., Adv. Mater.10, 64 (1998). (10.1002/(SICI)1521-4095(199801)10:1<64::AID-ADMA64>3.0.CO;2-G) / Adv. Mater. by Tessler N. (1998)
See for example the World Wide Web site of Cambridge Display Technology (http://www.cdtltd.co.uk).
10.1126/science.270.5238.972
Burroughes J. H., Jones C. A., Friend R. H., Nature335, 137 (1988). (10.1038/335137a0) / Nature by Burroughes J. H. (1988)
A. R. Brown C. P. Jarrett D. M. de Leeuw M. Matters Synth. Met. 88 37 (1997). (10.1016/S0379-6779(97)80881-8)
C. C. Wu et al. IEEE Electron Device Lett. 18 609 (1997). (10.1109/55.644086)
Bao Z., Dodabalapur A., Lovinger A. J., Appl. Phys. Lett.69, 4108 (1996). (10.1063/1.117834) / Appl. Phys. Lett. by Bao Z. (1996)
The regioregular P3HT with HT coupling >98.5% was obtained commercially from Aldrich Ltd., Dorset, UK. The synthesis route is described in Chen T.-A., Wu X., Rieke R. D., J. Am. Chem. Soc. 117, 233 (1995). (10.1021/ja00106a027) / J. Am. Chem. Soc. by Chen T.-A. (1995)
C. W. Tang and B. C. Hseih U.S. Patent 5 550 066 (1996).
Braun D., Heeger A. J., Appl. Phys. Lett.58, 1982 (1991); for a review, see N. C. Greenham and R. H. Friend, in Solid State Physics, vol. 49, H. Ehrenreich and F. Spaepen, Eds. (Academic Press, San Diego, CA, 1995), pp. 1–149. (10.1063/1.105039) / Appl. Phys. Lett. by Braun D. (1991)
Horowitz G., Garnier F., Yassar A., Hajlaoui R., Kouki F., Adv. Mater.8, 52 (1996). (10.1002/adma.19960080109) / Adv. Mater. by Horowitz G. (1996)
Nelson S. F., Lin Y. Y., Gundlach D. J., Jackson T. N., Appl. Phys. Lett.72, 1854 (1998). (10.1063/1.121205) / Appl. Phys. Lett. by Nelson S. F. (1998)
H. Sirringhaus N. Tessler R. H. Friend unpublished data.
Only at the source-drain contacts do the carriers have to travel normal to the layer structure. The film thickness must be sufficiently small to keep the contact resistance low (Fig. 3 B).
Shur M., Hack M., Shaw J. G., J. Appl. Phys.66, 3371 (1989); M. Shur and M. Hack, ibid.55, 3831 (1984). (10.1063/1.344481) / J. Appl. Phys. by Shur M. (1989)
G. Horowitz and P. Delannoy ibid. 70 469 (1991). (10.1063/1.350250)
K. D. Mackenzie A. J. Snell I. French P. G. Le Comber W. E. Spear Appl. Phys. A 31 87 (1983) (10.1007/BF00616310)
A. C. Hourd and W. E. Spear Philos. Mag. B 51 L13 (1984). (10.1080/13642818508240550)
This is not the result of an increase of V 0 (Fig. 3 A) shifting only slightly from V 0 ≈ 3 V at 320 K to V 0 ≈ –2.5 V at 144 K.
It was assumed that V 0 which is read directly from the transfer characteristics can be taken as a rough estimate for V FB that is n ind S ≈ C i / e ( V g – V 0 ).
10.1126/science.272.5267.1462
__ Phys. Rev. B 57, 2271 (1998). (10.1103/PhysRevB.57.2271) / Phys. Rev. B (1998)
A. Dodabalapur et al. Appl. Phys. Lett. in press.
We thank B. K. Papworth for the photograph P. Brown and M. Matters for discussions I. Musa for growing the SiO 2 gate oxide and Cambridge Display Technology for the MEH-PPV polymer. Supported by the European Commission (ESPRIT 24793–Frequent) and the Engineering and Physical Sciences Research Council.

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:37 a.m.)
Deposited	1 year, 7 months ago (Jan. 13, 2024, 12:28 a.m.)
Indexed	3 weeks, 5 days ago (Aug. 2, 2025, 1:01 a.m.)
Issued	27 years, 2 months ago (June 12, 1998)
Published	27 years, 2 months ago (June 12, 1998)
Published Print	27 years, 2 months ago (June 12, 1998)

Funders 0

None

BibTeX

@article{Sirringhaus_1998, title={Integrated Optoelectronic Devices Based on Conjugated Polymers}, volume={280}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.280.5370.1741}, DOI={10.1126/science.280.5370.1741}, number={5370}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Sirringhaus, Henning and Tessler, Nir and Friend, Richard H.}, year={1998}, month=jun, pages={1741–1744} }

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