A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires
10.1126/science.279.5348.208
Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.

Bibliography

Morales, A. M., & Lieber, C. M. (1998). A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires. Science, 279(5348), 208–211.

Authors 2
  1. Alfredo M. Morales (first)
  2. Charles M. Lieber (additional)
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Dates
Type When
Created 23 years ago (July 27, 2002, 5:49 a.m.)
Deposited 1 year, 7 months ago (Jan. 12, 2024, 11:56 p.m.)
Indexed 1 day, 20 hours ago (Aug. 20, 2025, 9:15 a.m.)
Issued 27 years, 7 months ago (Jan. 9, 1998)
Published 27 years, 7 months ago (Jan. 9, 1998)
Published Print 27 years, 7 months ago (Jan. 9, 1998)
Funders 0

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@article{Morales_1998, title={A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires}, volume={279}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.279.5348.208}, DOI={10.1126/science.279.5348.208}, number={5348}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Morales, Alfredo M. and Lieber, Charles M.}, year={1998}, month=jan, pages={208–211} }