DOI: 10.1126/science.276.5310.238. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

10.1126/science.276.5310.238

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be “tuned” by varying the manganate stochiometry. A device with La 0.7 Ca 0.3 MnO 3 as the semiconductor and PbZr 0.2 Ti 0.8 O 3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.

Bibliography

Mathews, S., Ramesh, R., Venkatesan, T., & Benedetto, J. (1997). Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures. Science, 276(5310), 238â240.

Authors 4

S. Mathews (first)
R. Ramesh (additional)
T. Venkatesan (additional)
J. Benedetto (additional)

References 14 Referenced 565

Ramesh R., et al., Appl. Phys. Lett. 64, 1588 (1994). (10.1063/1.111848) / Appl. Phys. Lett. by Ramesh R. (1994)
P. M. Heyman and G. H. Heilmeier Proc. IEEE 54 842 (1966). (10.1109/PROC.1966.4889)
10.1126/science.264.5157.413
Ogale S. B., et al., Phys. Rev. Lett. 77, 1159 (1996). (10.1103/PhysRevLett.77.1159) / Phys. Rev. Lett. by Ogale S. B. (1996)
D. H. Looney U.S. Patent 2 791 758 (1957)
W. L. Brown U.S. Patent 2 791 759 (1957)
I. M. Ross U.S. Patent 2 791 760 (1957) (10.1136/bmj.2.5047.760)
J. A. Morton U.S. Patent 2 791 761 (1957). (10.1136/bmj.2.5047.761)
Ahn C. H., et al., Science 269, 373 (1995). (10.1126/science.269.5222.373) / Science by Ahn C. H. (1995)
Watanabe Y., Appl. Phys. Lett. 66, 1770 (1995). (10.1063/1.113362) / Appl. Phys. Lett. by Watanabe Y. (1995)
10.1126/science.252.5008.944
The ferroelectric layers were patterned by in situ mechanical masking. The semiconductor channel and electrodes were patterned with photolithographic wet etch and lift-off techniques respectively. Samples were then photolithographically patterned again and ion-milled in order to isolate individual devices. The perovskite semiconductor layer LCMO was between 300 to 500 Å thick. The ferroelectric layer PZT was between 3000 and 4000 Å in thickness. Platinum electrodes 1000 Å in thickness were deposited ex situ after the patterning of the other layers. Analysis by x-ray diffraction performed before patterning and electrode deposition indicated that no undesirable phases were formed and that both the LCMO and PZT were well-oriented with strong [001] texture. Rutherford backscattering data confirmed that the film stochiometry was consistent (within error) with that of the target materials. Transmission electron microscopy showed that the interfaces were sharp and smooth with no significant interdiffusion or formation of secondary phases. Pulsed hysteresis loops were acquired at room temperature with a Radiant Technologies RT-66A measurement system in order to determine the ferroelectric properties of the PZT layer.
The hysteresis loops in Figs. 1 and 3 are shifted slightly toward negative gate voltages. We attribute this shift to the fact that the top and bottom electrodes are made of different materials. Because the carrier concentration and electronic work function of the top and bottom electrodes are different we expect this type of asymmetry in the hysteresis of the devices.
S.M. and R.R. would like to acknowledge the support of the U.S. Department of Army Federated Laboratories. T.V. would like to acknowledge the support of NSF grant DMR 9404579.

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:45 a.m.)
Deposited	1 year, 7 months ago (Jan. 12, 2024, 10:54 p.m.)
Indexed	23 hours, 10 minutes ago (Aug. 20, 2025, 8:24 a.m.)
Issued	28 years, 4 months ago (April 11, 1997)
Published	28 years, 4 months ago (April 11, 1997)
Published Print	28 years, 4 months ago (April 11, 1997)

Funders 0

None

BibTeX

@article{Mathews_1997, title={Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures}, volume={276}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.276.5310.238}, DOI={10.1126/science.276.5310.238}, number={5310}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Mathews, S. and Ramesh, R. and Venkatesan, T. and Benedetto, J.}, year={1997}, month=apr, pages={238–240} }

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