Abstract
A flat epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in a two-step process. Deposition of a critical thickness of silver at low temperature led to the formation of a dense nanocluster film. Upon annealing, all atoms rearranged themselves into an atomically flat film. This silver film has a close-packed (111) structure modulated by a “silver mean” quasi-periodic sequence. The ability to grow such epitaxial overlayers of metals on semiconductors enables the testing of theoretical models and provides a connection between metal and semiconductor technologies.
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Dates
Type | When |
---|---|
Created | 18 years, 10 months ago (Oct. 27, 2006, 2:30 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 12, 2024, 11:07 p.m.) |
Indexed | 11 months, 4 weeks ago (Sept. 8, 2024, 2:25 a.m.) |
Issued | 29 years, 1 month ago (July 12, 1996) |
Published | 29 years, 1 month ago (July 12, 1996) |
Published Print | 29 years, 1 month ago (July 12, 1996) |
@article{Smith_1996, title={Formation of Atomically Flat Silver Films on GaAs with a “Silver Mean” Quasi Periodicity}, volume={273}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.273.5272.226}, DOI={10.1126/science.273.5272.226}, number={5272}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Smith, Arthur R. and Chao, Kuo-Jen and Niu, Qian and Shih, Chih-Kang}, year={1996}, month=jul, pages={226–228} }