10.1126/science.269.5230.1560
Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are α-hexathienylene (α-6T) and C 60 . The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of α-6T and C 60 . The observed effects are not unique to the two materials chosen and can be quite universal provided certain conditions are met. The device can be used as a building block to form low-cost, low-power complementary integrated circuits.

Bibliography

Dodabalapur, A., Katz, H. E., Torsi, L., & Haddon, R. C. (1995). Organic Heterostructure Field-Effect Transistors. Science, 269(5230), 1560–1562.

Authors 4
  1. A. Dodabalapur (first)
  2. H. E. Katz (additional)
  3. L. Torsi (additional)
  4. R. C. Haddon (additional)
References 14 Referenced 428
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Dates
Type When
Created 18 years, 10 months ago (Oct. 27, 2006, 2:19 p.m.)
Deposited 1 year, 7 months ago (Jan. 12, 2024, 6:34 p.m.)
Indexed 1 month ago (July 23, 2025, 8:46 a.m.)
Issued 29 years, 11 months ago (Sept. 15, 1995)
Published 29 years, 11 months ago (Sept. 15, 1995)
Published Print 29 years, 11 months ago (Sept. 15, 1995)
Funders 0

None

@article{Dodabalapur_1995, title={Organic Heterostructure Field-Effect Transistors}, volume={269}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.269.5230.1560}, DOI={10.1126/science.269.5230.1560}, number={5230}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Dodabalapur, A. and Katz, H. E. and Torsi, L. and Haddon, R. C.}, year={1995}, month=sep, pages={1560–1562} }