DOI: 10.1126/science.258.5080.271. Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe <sub>2</sub> Crystals

Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe 2 Crystals

10.1126/science.258.5080.271

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CuInSe 2 . After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.

Bibliography

Cahen, D., Gilet, J.-M., Schmitz, C., Chernyak, L., Gartsman, K., & Jakubowicz, A. (1992). Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe 2 Crystals. Science, 258(5080), 271â274.

Authors 6

David Cahen (first)
Jean-Marc Gilet (additional)
Claus Schmitz (additional)
Leonid Chernyak (additional)
Konstantin Gartsman (additional)
Abram Jakubowicz (additional)

References 31 Referenced 45

ANIYA, M, A CHEMICAL APPROACH FOR THE MICROSCOPIC MECHANISM OF FAST ION-TRANSPORT IN SOLIDS, SOLID STATE IONICS 50: 125 (1992). (10.1016/0167-2738(92)90044-P) / SOLID STATE IONICS (1992)
BACHMANN, K.J., PHASE-RELATIONS IN THE CU, IN, SE SYSTEM AND THE PROPERTIES OF CULNSE2 SINGLE-CRYSTALS, APPLIED PHYSICS LETTERS 44: 407 (1984). (10.1063/1.94791) / APPLIED PHYSICS LETTERS (1984)
CAHEN, D, JOURNAL OF ELECTRONIC MATERIALS 19: 23 (1990). / JOURNAL OF ELECTRONIC MATERIALS (1990)
Cahen, D., Ternary and Multinary Compounds, Proceedings of the Seventh International Conference TMC: 433 (1987). / Ternary and Multinary Compounds, Proceedings of the Seventh International Conference (1987)
CHERNYAK L unpublished data.
Dagan, G., Journal of Physical Chemistry 96: 11009 (1992). (10.1021/j100205a073) / Journal of Physical Chemistry (1992)
EL-AZAB, M. I., IEEE TRANSACTIONS ON ELECTRON DEVICES 27: 255 (1980). (10.1109/T-ED.1980.19847) / IEEE TRANSACTIONS ON ELECTRON DEVICES (1980)
FULLER, C.S., MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON, PHYSICAL REVIEW 96: 21 (1954). (10.1103/PhysRev.96.21) / PHYSICAL REVIEW (1954)
Gartsman, K., Applied Physics Letters 61: 2428 (1992). (10.1063/1.108459) / Applied Physics Letters (1992)
HO, P.S., ELECTROMIGRATION IN METALS, REPORTS ON PROGRESS IN PHYSICS 52: 301 (1989). (10.1088/0034-4885/52/3/002) / REPORTS ON PROGRESS IN PHYSICS (1989)
JAKUBOWICZ, A, BULLETIN OF THE ISRAEL PHYSICAL SOCIETY 35: 12 (1989). / BULLETIN OF THE ISRAEL PHYSICAL SOCIETY (1989)
Jakubowicz, A., Advanced Materials 4: 741 (1992). (10.1002/adma.19920041107) / Advanced Materials (1992)
KHAIT, Y.L., KINETIC-MODEL FOR GRADUAL DEGRADATION IN SEMICONDUCTOR-LASERS AND LIGHT-EMITTING-DIODES, APPLIED PHYSICS LETTERS 53: 2135 (1988). (10.1063/1.100297) / APPLIED PHYSICS LETTERS (1988)
KIMERLING, L.C., RECOMBINATION ENHANCED DEFECT REACTIONS, SOLID-STATE ELECTRONICS 21: 1391 (1978). (10.1016/0038-1101(78)90215-0) / SOLID-STATE ELECTRONICS (1978)
LAI, J, COPPER INDIUM DISELENIDE BASED THIN-FILM TRANSISTORS, APPLIED PHYSICS LETTERS 59: 1990 (1991). (10.1063/1.106159) / APPLIED PHYSICS LETTERS (1991)
LEAMY, H.J., CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY, JOURNAL OF APPLIED PHYSICS 53: R51 (1982). (10.1063/1.331667) / JOURNAL OF APPLIED PHYSICS (1982)
MATSON, R.J., CDS INDUCED HOMOJUNCTION FORMATION IN CRYSTALLINE P-CULNSE2, APPLIED PHYSICS LETTERS 50: 158 (1987). (10.1063/1.97647) / APPLIED PHYSICS LETTERS (1987)
Murch G. E. Diffusion in Crystalline Solids (1984).
NEUMANN, H, INFLUENCE OF INTRINSIC DEFECTS ON THE ELECTRICAL-PROPERTIES OF AIBIIIC2VI COMPOUNDS, CRYSTAL RESEARCH AND TECHNOLOGY 18: 483 (1983). (10.1002/crat.2170180409) / CRYSTAL RESEARCH AND TECHNOLOGY (1983)
PEARTON, S. J., APPLIED PHYSICS LETTERS 41: 176 (1982). (10.1063/1.93452) / APPLIED PHYSICS LETTERS (1982)
PEARTON, S.J., MOTION OF DEEP GOLD-RELATED CENTERS IN REVERSE-BIASED SILICON JUNCTION DIODES AT ROOM-TEMPERATURE, APPLIED PHYSICS LETTERS 41: 1148 (1982). (10.1063/1.93415) / APPLIED PHYSICS LETTERS (1982)
PELL, E.M., ION DRIFT IN AN N-P JUNCTION, JOURNAL OF APPLIED PHYSICS 31: 291 (1960). (10.1063/1.1735561) / JOURNAL OF APPLIED PHYSICS (1960)
Rickert H. Electrochemistry of Solids (1982). (10.1007/978-3-642-68312-1)
RICKERT, H, MEASUREMENTS OF CHEMICAL DIFFUSION-COEFFICIENTS OF MIXED CONDUCTING SOLIDS USING POINT ELECTRODES - INVESTIGATIONS ON CU2S, SOLID STATE IONICS 11: 257 (1983). (10.1016/0167-2738(83)90032-2) / SOLID STATE IONICS (1983)
ROCKETT, A, CUINSE2 FOR PHOTOVOLTAIC APPLICATIONS, JOURNAL OF APPLIED PHYSICS 70: R81 (1991). (10.1063/1.349175) / JOURNAL OF APPLIED PHYSICS (1991)
SEVERIENS, J.C., MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON, PHYSICAL REVIEW 92: 1322 (1953). (10.1103/PhysRev.92.1322) / PHYSICAL REVIEW (1953)
SHIH, I, SOME CHARACTERISTICS OF IN-DIFFUSED CUINSE2 HOMOJUNCTIONS, JOURNAL OF APPLIED PHYSICS 56: 421 (1984). (10.1063/1.333981) / JOURNAL OF APPLIED PHYSICS (1984)
TAVENDALE, A.J., INJECTION AND DRIFT OF A POSITIVELY CHARGED HYDROGEN SPECIES IN P-TYPE GAAS, APPLIED PHYSICS LETTERS 56: 1457 (1990). (10.1063/1.102497) / APPLIED PHYSICS LETTERS (1990)
TOMLINSON, R.D., HOMOJUNCTION FABRICATION IN CULNSE2 BY COPPER DIFFUSION, APPLIED PHYSICS LETTERS 26: 383 (1975). (10.1063/1.88185) / APPLIED PHYSICS LETTERS (1975)
WALUKIEWICZ, W, AMPHOTERIC NATIVE DEFECTS IN SEMICONDUCTORS, APPLIED PHYSICS LETTERS 54: 2094 (1989). (10.1063/1.101174) / APPLIED PHYSICS LETTERS (1989)
WEPPNER, W, REACTIVITY OF MULTINARY SOLIDS, SOLID STATE IONICS 32: 466 (1989). / SOLID STATE IONICS (1989)

Dates

Type	When
Created	18 years, 10 months ago (Oct. 5, 2006, 7:03 p.m.)
Deposited	1 year, 7 months ago (Jan. 12, 2024, 5:32 p.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 7:29 p.m.)
Issued	32 years, 10 months ago (Oct. 9, 1992)
Published	32 years, 10 months ago (Oct. 9, 1992)
Published Print	32 years, 10 months ago (Oct. 9, 1992)

Funders 0

None

BibTeX

@article{Cahen_1992, title={Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe 2 Crystals}, volume={258}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.258.5080.271}, DOI={10.1126/science.258.5080.271}, number={5080}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Cahen, David and Gilet, Jean-Marc and Schmitz, Claus and Chernyak, Leonid and Gartsman, Konstantin and Jakubowicz, Abram}, year={1992}, month=oct, pages={271–274} }

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