10.1126/science.256.5063.1537
Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

Time-dependent crack growth has been measured on a precracked, single-crystal silicon cantilever beam 75 micrometers long that was excited at resonance. Growth of the precrack changes the resonant frequency of the beam, which is correlated to crack length. The measured steady-state crack growth rate was as slow as 2.9 × 10 –13 meter per second, although the apparatus can measure crack growth rates as low as 10 –15 meter per second. It is postulated that static fatigue of the native surface silica layer is the mechanism for crack growth. These experiments demonstrate the possibility of rate-dependent failure of silicon devices and the applicability of linear elastic fracture mechanics to small-scale micromechanical devices. The results indicate that slow crack growth must therefore be considered when evaluating the reliability of thin-film silicon structures.

Bibliography

Connally, J. A., & Brown, S. B. (1992). Slow Crack Growth in Single-Crystal Silicon. Science, 256(5063), 1537–1539.

Authors 2
  1. J. A. Connally (first)
  2. S. B. Brown (additional)
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Dates
Type When
Created 18 years, 10 months ago (Oct. 5, 2006, 7:03 p.m.)
Deposited 1 year, 7 months ago (Jan. 12, 2024, 4:03 p.m.)
Indexed 3 weeks, 5 days ago (Aug. 6, 2025, 8:48 a.m.)
Issued 33 years, 2 months ago (June 12, 1992)
Published 33 years, 2 months ago (June 12, 1992)
Published Print 33 years, 2 months ago (June 12, 1992)
Funders 0

None

@article{Connally_1992, title={Slow Crack Growth in Single-Crystal Silicon}, volume={256}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.256.5063.1537}, DOI={10.1126/science.256.5063.1537}, number={5063}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Connally, J. A. and Brown, S. B.}, year={1992}, month=jun, pages={1537–1539} }