DOI: 10.1126/science.245.4924.1369. Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices

Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices

10.1126/science.245.4924.1369

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Negative differential resistance (NDR) is the essential property that allows fast switching in certain types of electronic devices. With scanning tunneling microscopy (STM) and scanning tunneling spectroscopy, it is shown that the current-voltage characteristics of a diode configuration consisting of an STM tip over specific sites of a boron-exposed silicon(111) surface exhibit NDR. These NDR-active sites are of atomic dimensions (∼1 nanometer). NDR in this case is the result of tunneling through localized, atomic-like states. Thus, desirable device characteristics can be obtained even on the atomic scale.

Bibliography

Lyo, I.-W., & Avouris, P. (1989). Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices. Science, 245(4924), 1369â1371.

Authors 2

In-Whan Lyo (first)
Phaedon Avouris (additional)

References 19 Referenced 245

AVOURIS, P, ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY, PHYSICAL REVIEW B 39: 5091 (1989). (10.1103/PhysRevB.39.5091) / PHYSICAL REVIEW B (1989)
BEDROSSIAN, P, BULLETIN OF THE AMERICAN PHYSICAL SOCIETY 34: 720 (1989). / BULLETIN OF THE AMERICAN PHYSICAL SOCIETY (1989)
BINNIG, G, SCANNING TUNNELING MICROSCOPY - FROM BIRTH TO ADOLESCENCE, REVIEWS OF MODERN PHYSICS 59: 615 (1987). (10.1103/RevModPhys.59.615) / REVIEWS OF MODERN PHYSICS (1987)
ESAKI, L, NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS, PHYSICAL REVIEW 109: 603 (1958). (10.1103/PhysRev.109.603) / PHYSICAL REVIEW (1958)
HAMERS, R.J., ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY, PHYSICAL REVIEW LETTERS 60: 2527 (1988). (10.1103/PhysRevLett.60.2527) / PHYSICAL REVIEW LETTERS (1988)
10.1126/science.3051380
HEINRICH H SPRINGER SERIES IN SOLID STATE SCIENCES 83 (1988).
HIRAYAMA, H, REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND AUGER-ELECTRON SPECTROSCOPIC STUDY ON B/SI(111) SURFACES, SURFACE SCIENCE 193: L47 (1988). (10.1016/0039-6028(88)90316-0) / SURFACE SCIENCE (1988)
KAXIRAS E unpublished data.
KOROBTSOV, V.V., SURFACE SCIENCE 195: 466 (1988). (10.1016/0039-6028(88)90354-8) / SURFACE SCIENCE (1988)
LANG, N.D., PHYSICAL REVIEW B 34: 5947 (1986). (10.1103/PhysRevB.34.5947) / PHYSICAL REVIEW B (1986)
LANG, N.D., THEORY OF ATOMIC CHEMISORPTION ON SIMPLE METALS, PHYSICAL REVIEW B 18: 616 (1978). (10.1103/PhysRevB.18.616) / PHYSICAL REVIEW B (1978)
Lyo, I.-W., Physical Review Letters 63:1261 (1989). (10.1103/PhysRevLett.63.1261) / Physical Review Letters (1989)
NOGAMI, J, PHYS REV B 35: 4137 (1987). (10.1103/PhysRevB.35.4137) / PHYS REV B (1987)
QUATE, C.F., VACUUM TUNNELING - A NEW TECHNIQUE FOR MICROSCOPY, PHYSICS TODAY 39: 26 (1986). / PHYSICS TODAY (1986)
Sze S. M. The Physics of Semiconductor Devices (1981).
10.1126/science.234.4774.304
UHRBERG, RIG, PHOTOEMISSION-STUDY OF THE SURFACE AND BULK ELECTRONIC-STRUCTURES OF SI(111)7X7 AND SI(111) SQUARE-ROOT-3X3-SQUARE-ROOT-AL, PHYSICAL REVIEW B 31: 3805 (1985). (10.1103/PhysRevB.31.3805) / PHYSICAL REVIEW B (1985)
WOLKOW, R, ATOM-RESOLVED SURFACE-CHEMISTRY USING SCANNING TUNNELING MICROSCOPY, PHYSICAL REVIEW LETTERS 60: 1049 (1988). (10.1103/PhysRevLett.60.1049) / PHYSICAL REVIEW LETTERS (1988)

Dates

Type	When
Created	18 years, 10 months ago (Oct. 5, 2006, 5:21 p.m.)
Deposited	1 year, 7 months ago (Jan. 12, 2024, 11:44 a.m.)
Indexed	2 weeks, 5 days ago (Aug. 6, 2025, 9:58 a.m.)
Issued	35 years, 11 months ago (Sept. 22, 1989)
Published	35 years, 11 months ago (Sept. 22, 1989)
Published Print	35 years, 11 months ago (Sept. 22, 1989)

Funders 0

None

BibTeX

@article{Lyo_1989, title={Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices}, volume={245}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.245.4924.1369}, DOI={10.1126/science.245.4924.1369}, number={4924}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Lyo, In-Whan and Avouris, Phaedon}, year={1989}, month=sep, pages={1369–1371} }

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