DOI: 10.1126/science.238.4824.181. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure

High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure

10.1126/science.238.4824.181

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700°C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530°C.

Bibliography

Mishima, O., Tanaka, J., Yamaoka, S., & Fukunaga, O. (1987). High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure. Science, 238(4824), 181â183.

Authors 4

Osamu Mishima (first)
Junzo Tanaka (additional)
Shinobu Yamaoka (additional)
Osamu Fukunaga (additional)

References 13 Referenced 246

Bovenkerk H. P. U.S. Patent 3735321 (1973).
BERZ, F, THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE, SOLID-STATE ELECTRONICS 19: 437 (1976). (10.1016/0038-1101(76)90003-4) / SOLID-STATE ELECTRONICS (1976)
CHRENKO, R.M., ULTRAVIOLET AND INFRARED-SPECTRA OF CUBIC BORON-NITRIDE, SOLID STATE COMMUNICATIONS 14: 511 (1974). (10.1016/0038-1098(74)90978-8) / SOLID STATE COMMUNICATIONS (1974)
Collins, A. T., The Properties of Diamond: 79 (1979). / The Properties of Diamond (1979)
DeVries R. C. General sElectric Corporation Report 72 CRD 178 (1972).
DIMITRIADIS, C.A., A SCANNING-ELECTRON-INDUCED OR LIGHT-BEAM-INDUCED CURRENT METHOD FOR DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SEMICONDUCTORS, IEEE TRANSACTIONS ON ELECTRON DEVICES 32: 1761 (1985). (10.1109/T-ED.1985.22193) / IEEE TRANSACTIONS ON ELECTRON DEVICES (1985)
GIELISSE, P.J., LATTICE INFRARED SPECTRA OF BORON NITRIDE AND BORON MONOPHOSPHIDE, PHYSICAL REVIEW 155: 1039 (1967). (10.1103/PhysRev.155.1039) / PHYSICAL REVIEW (1967)
MISHIMA, O, CRYSTAL-GROWTH OF CUBIC BORON-NITRIDE BY TEMPERATURE DIFFERENCE METHOD AT APPROXIMATELY-55-KBAR AND APPROXIMATELY-1800-DEGREES-C, JOURNAL OF APPLIED PHYSICS 61: 2822 (1987). (10.1063/1.337874) / JOURNAL OF APPLIED PHYSICS (1987)
SLACK, G.A., NONMETALLIC CRYSTALS WITH HIGH THERMAL-CONDUCTIVITY, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 34: 321 (1973). (10.1016/0022-3697(73)90092-9) / JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (1973)
WENTORF, R.H., PREPARATION OF SEMICONDUCTING DIAMONDS, JOURNAL OF CHEMICAL PHYSICS 36: 1987 (1962). (10.1063/1.1732815) / JOURNAL OF CHEMICAL PHYSICS (1962)
WENTORF, R.H., PREPARATION OF SEMICONDUCTING CUBIC BORON NITRIDE, JOURNAL OF CHEMICAL PHYSICS 36: 1990 (1962). (10.1063/1.1732816) / JOURNAL OF CHEMICAL PHYSICS (1962)
ZIPPERIAN, T.E., A NOVEL P+NN+ GAAS/AL0.30GA0.70AS/GAAS DOUBLE HETEROJUNCTION DIODE FOR HIGH-TEMPERATURE ELECTRONIC APPLICATIONS, APPLIED PHYSICS LETTERS 40: 901 (1982). (10.1063/1.92941) / APPLIED PHYSICS LETTERS (1982)
ZIPPERIAN, T.E., GAP ALXGA1-XP HETEROJUNCTION TRANSISTORS FOR HIGH-TEMPERATURE ELECTRONIC APPLICATIONS, JOURNAL OF APPLIED PHYSICS 54: 6019 (1983). (10.1063/1.331758) / JOURNAL OF APPLIED PHYSICS (1983)

Dates

Type	When
Created	18 years, 10 months ago (Oct. 5, 2006, 4:28 p.m.)
Deposited	1 year, 7 months ago (Jan. 12, 2024, 10:56 a.m.)
Indexed	3 weeks, 2 days ago (July 28, 2025, 5:46 p.m.)
Issued	37 years, 10 months ago (Oct. 9, 1987)
Published	37 years, 10 months ago (Oct. 9, 1987)
Published Print	37 years, 10 months ago (Oct. 9, 1987)

Funders 0

None

BibTeX

@article{Mishima_1987, title={High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure}, volume={238}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.238.4824.181}, DOI={10.1126/science.238.4824.181}, number={4824}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Mishima, Osamu and Tanaka, Junzo and Yamaoka, Shinobu and Fukunaga, Osamu}, year={1987}, month=oct, pages={181–183} }

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