DOI: 10.1126/science.208.4446.908. III-V Compounds and Alloys: An Update

10.1126/science.208.4446.908

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

The III-V compounds and alloys have been studied for three decades. Until recently, these materials have been commercialized for only a few specialized optoelectronic devices and microwave devices. Advances in thin-film epitaxy techniques, such as liquid phase epitaxy and chemical vapor deposition, are now providing the ability to form good quality lattice-matched heterojunctions with III-V materials. New optoelectronic devices, such as room-temperature continuous-wave injection lasers, have already resulted. This newfound ability may also affect the field of high-speed integrated circuits.

Bibliography

Woodall, J. M. (1980). III-V Compounds and Alloys: An Update. Science, 208(4446), 908â915.

Authors 1

Jerry M. Woodall (first)

References 22 Referenced 25

BERGH, A.A., LIGHT-EMITTING DIODES, PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS 60: 156 (1972). (10.1109/PROC.1972.8592) / PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS (1972)
Blom G. M. Journal of Crystal Growth 27 (1974). (10.1016/S0022-0248(74)80044-8)
BLUM, S.E., GROWTH OF LOW STRAIN GAP BY LIQUID-ENCAPSULATION - VERTICAL-GRADIENT FREEZE TECHNIQUE, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 120: 588 (1973). (10.1149/1.2403507) / JOURNAL OF THE ELECTROCHEMICAL SOCIETY (1973)
Craford, M. G., Optical Properties of Solids: 188 (1976). / Optical Properties of Solids (1976)
CRAFORD, M.G., VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS, PROCEEDINGS OF THE IEEE 61: 862 (1973). (10.1109/PROC.1973.9175) / PROCEEDINGS OF THE IEEE (1973)
Duke, C. B., Physics Today 26 23 (1973). / Physics Today (1973)
FAN, JCC, CALCULATED AND MEASURED EFFICIENCIES OF THIN-FILM SHALLOW-HOMOJUNCTION GAAS SOLAR-CELLS ON GE SUBSTRATES, APPLIED PHYSICS LETTERS 35: 875 (1979). (10.1063/1.90990) / APPLIED PHYSICS LETTERS (1979)
HARTMAN P CRYSTAL GROWTH INTRO (1973).
HOVEL H SOLAR CELLS 11 (1975).
IMAMURA, Y, DEFECT STRUCTURE AND ELECTRONIC CHARACTERISTICS OF GAAS-LAYERS GROWN BY ELECTROEPITAXY AND THERMAL LPE, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 126: 1381 (1979). (10.1149/1.2129283) / JOURNAL OF THE ELECTROCHEMICAL SOCIETY (1979)
MATTHEWS J.W. MATERIALS SCI TECHNO (1975). (10.2307/1443642)
MILNES A.G. HETEROJUNCTIONS META (1972).
NELSON, H, EPITAXIAL GROWTH FROM THE LIQUID STATE AND ITS APPLICATION TO THE FABRICATION OF TUNNEL AND LASER DIODES, RCA REVIEW 24: 603 (1963). / RCA REVIEW (1963)
NUESE, C.J., 3-5 ALLOYS FOR OPTOELECTRONIC APPLICATIONS, JOURNAL OF ELECTRONIC MATERIALS 6: 253 (1977). (10.1007/BF02660488) / JOURNAL OF ELECTRONIC MATERIALS (1977)
10.1126/science.208.4446.916
RUPPRECHT, H, EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY, APPLIED PHYSICS LETTERS 11: 81 (1967). (10.1063/1.1755045) / APPLIED PHYSICS LETTERS (1967)
SMALL, M.B., EXPLANATION FOR PHENOMENON OF MENISCUS LINES ON SURFACES OF (GAAL)AS ALLOYS GROWN BY LPE, JOURNAL OF CRYSTAL GROWTH 39: 216 (1977). (10.1016/0022-0248(77)90266-4) / JOURNAL OF CRYSTAL GROWTH (1977)
SZE S.M. PHYSICS SEMICONDUCTO (1969).
WOLFORD, D.J., EVIDENCE FOR RADIATIVE RECOMBINATION IN GAAS-1-XP-X-N (0.28 LESS THAN OR EQUAL TO 0.45) INVOLVING AN ISOLATED NITROGEN IMPURITY STATE ASSOCIATED WITH GAMMA-1 MINIMUM, PHYSICAL REVIEW LETTERS 36: 1400 (1976). (10.1103/PhysRevLett.36.1400) / PHYSICAL REVIEW LETTERS (1976)
WOLFORD, D.J., IDENTIFICATION OF RECOMBINATION LUMINESCENCE TRANSITIONS IN N-DOPED GAAS1-XPX (X=0.87), SOLID STATE COMMUNICATIONS 19: 741 (1976). (10.1016/0038-1098(76)90910-8) / SOLID STATE COMMUNICATIONS (1976)
WOODALL, J.M., ISOTHERMAL SOLUTION MIXING GROWTH OF THIN GA1-XALXAS LAYERS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY 118: 150 (1971). (10.1149/1.2407933) / JOURNAL OF THE ELECTROCHEMICAL SOCIETY (1971)
WOODALL, J.M., DONOR AND CARRIER DISTRIBUTIONS IN OXYGEN-GROWN GAAS, TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME 239: 378 (1967). / TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME (1967)

Dates

Type	When
Created	18 years, 10 months ago (Oct. 5, 2006, 1:45 p.m.)
Deposited	1 year, 7 months ago (Jan. 11, 2024, 10:09 p.m.)
Indexed	1 year, 6 months ago (Feb. 2, 2024, 8:41 p.m.)
Issued	45 years, 3 months ago (May 23, 1980)
Published	45 years, 3 months ago (May 23, 1980)
Published Print	45 years, 3 months ago (May 23, 1980)

Funders 0

None

BibTeX

@article{Woodall_1980, title={III-V Compounds and Alloys: An Update}, volume={208}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.208.4446.908}, DOI={10.1126/science.208.4446.908}, number={4446}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Woodall, Jerry M.}, year={1980}, month=may, pages={908–915} }

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