DOI: 10.1126/science.1250140. The valley Hall effect in MoS <sub>2</sub> transistors

The valley Hall effect in MoS 2 transistors

10.1126/science.1250140

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Using the valleys in monolayer MoS 2 The electronic structure of the two-dimensional material MoS 2 has two distinct “valleys” of energy that may help to carry information in future electronic devices. Mak et al. observed the so-called valley Hall effect in a monolayer of MoS 2 . The electrons from different valleys moved in opposite directions across the sample, with one valley being overrepresented with respect to the other. The scientists achieved this by shining circularly polarized light on the material, which created an imbalance in the population of the two valleys. The findings may enable practical applications in the newly formed field of valleytronics. Science , this issue p. 1489

Bibliography

Mak, K. F., McGill, K. L., Park, J., & McEuen, P. L. (2014). The valley Hall effect in MoS 2 transistors. Science, 344(6191), 1489â1492.

Authors 4

K. F. Mak (first)
K. L. McGill (additional)
J. Park (additional)
P. L. McEuen (additional)

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Dates

Type	When
Created	11 years, 2 months ago (June 26, 2014, 2:15 p.m.)
Deposited	1 year, 7 months ago (Jan. 10, 2024, 4:09 p.m.)
Indexed	2 hours, 19 minutes ago (Aug. 27, 2025, 12:05 p.m.)
Issued	11 years, 2 months ago (June 27, 2014)
Published	11 years, 2 months ago (June 27, 2014)
Published Print	11 years, 2 months ago (June 27, 2014)

Funders 0

None

BibTeX

@article{Mak_2014, title={The valley Hall effect in MoS 2 transistors}, volume={344}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1250140}, DOI={10.1126/science.1250140}, number={6191}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Mak, K. F. and McGill, K. L. and Park, J. and McEuen, P. L.}, year={2014}, month=jun, pages={1489–1492} }

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