Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

Exploiting Defects in a Jam Phase-change materials that can readily switch between crystalline and amorphous states are increasingly finding use in nonvolatile memory devices (see the Perspective by Hewak and Gholipour ). Using high-resolution transmission electron microscopy, Nam et al. (p. 1561 ) show that for Ge 2 Sb 2 Te 5 , the application of an electric field drives crystal dislocations in one direction, leading to their accumulation and eventual jamming, which causes the phase transition. Loke et al. (p. 1566 ) found that by applying a constant low voltage to Ge 2 Sb 2 Te 5 , they could accelerate its phase-switching speeds, without harming the long-term stability of the switched state.

Bibliography

Nam, S.-W., Chung, H.-S., Lo, Y. C., Qi, L., Li, J., Lu, Y., Johnson, A. T. C., Jung, Y., Nukala, P., & Agarwal, R. (2012). Electrical Wind Force–Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires. Science, 336(6088), 1561–1566.

Dates
Type When
Created 13 years, 1 month ago (June 21, 2012, 7:53 p.m.)
Deposited 1 year, 7 months ago (Jan. 10, 2024, 8:59 a.m.)
Indexed 1 day, 17 hours ago (Aug. 19, 2025, 6:13 a.m.)
Issued 13 years, 1 month ago (June 22, 2012)
Published 13 years, 1 month ago (June 22, 2012)
Published Print 13 years, 1 month ago (June 22, 2012)
Funders 0

None

@article{Nam_2012, title={Electrical Wind Force–Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires}, volume={336}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1220119}, DOI={10.1126/science.1220119}, number={6088}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Nam, Sung-Wook and Chung, Hee-Suk and Lo, Yu Chieh and Qi, Liang and Li, Ju and Lu, Ye and Johnson, A.T. Charlie and Jung, Yeonwoong and Nukala, Pavan and Agarwal, Ritesh}, year={2012}, month=jun, pages={1561–1566} }