Abstract
Exploiting Defects in a Jam Phase-change materials that can readily switch between crystalline and amorphous states are increasingly finding use in nonvolatile memory devices (see the Perspective by Hewak and Gholipour ). Using high-resolution transmission electron microscopy, Nam et al. (p. 1561 ) show that for Ge 2 Sb 2 Te 5 , the application of an electric field drives crystal dislocations in one direction, leading to their accumulation and eventual jamming, which causes the phase transition. Loke et al. (p. 1566 ) found that by applying a constant low voltage to Ge 2 Sb 2 Te 5 , they could accelerate its phase-switching speeds, without harming the long-term stability of the switched state.
References
33
Referenced
172
10.1038/nmat2009
10.1146/annurev-matsci-082908-145405
10.1021/nl104537c
10.1063/1.1636259
-
Fons P., et al.., Phys. Rev. B 82, 041203(R) (2010).
(
10.1103/PhysRevB.82.041203
) / Phys. Rev. B by Fons P. (2010) 10.1038/nchem.1007
10.1103/PhysRevLett.100.056805
10.1038/nnano.2007.291
10.1149/1.3079480
10.1063/1.3184584
- M. H. Lee et al . IEEE International Electron Devices Meeting (IEDM) 28.6.1. (2010).
10.1080/14786436008241199
10.1016/0001-6160(59)90067-7
- H. Zheng et al . Nat. Commun. 1 144 (2010).
10.1038/nmat2085
10.1038/nmat2370
10.1038/nature08692
10.1103/PhysRevLett.100.025502
10.1063/1.3447941
10.1080/0950083031000137839
10.1038/nmat1215
10.1103/PhysRevLett.96.055507
10.1103/PhysRevB.71.224102
10.1103/PhysRevLett.70.3752
-
D. Hull D. J. Bacon Introduction to Dislocations (Butterworth-Heinemann Oxford ed. 4 2001).
(
10.1016/B978-075064681-9/50002-X
) 10.1103/PhysRevE.53.4655
10.1103/RevModPhys.73.1067
10.1557/JMR.1990.0286
10.1080/095008399177147
10.1126/science.1195628
10.1080/09500830310001657353
10.1016/j.actamat.2009.10.049
10.1103/PhysRevLett.97.035701
Dates
Type | When |
---|---|
Created | 13 years, 1 month ago (June 21, 2012, 7:53 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 10, 2024, 8:59 a.m.) |
Indexed | 1 day, 17 hours ago (Aug. 19, 2025, 6:13 a.m.) |
Issued | 13 years, 1 month ago (June 22, 2012) |
Published | 13 years, 1 month ago (June 22, 2012) |
Published Print | 13 years, 1 month ago (June 22, 2012) |
@article{Nam_2012, title={Electrical Wind Force–Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires}, volume={336}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1220119}, DOI={10.1126/science.1220119}, number={6088}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Nam, Sung-Wook and Chung, Hee-Suk and Lo, Yu Chieh and Qi, Liang and Li, Ju and Lu, Ye and Johnson, A.T. Charlie and Jung, Yeonwoong and Nukala, Pavan and Agarwal, Ritesh}, year={2012}, month=jun, pages={1561–1566} }