Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

Paracrystalline Amorphous silicon has traditionally been represented by a continuous random network model in which there is no long-range ordering for the atoms, and some have less than fourfold coordination, which form dangling bonds—a type of defect. Treacy and Borisenko (p. 950 ; see the Perspective by Gibson ) used fluctuation electron microscopy to explain that models including regions of crystalline order are needed to fit the observed local variations in structure. Thus, on the 1- to 2-nanometer-length scale, this material should be thought of as having a paracrystalline structure containing localized crystalline regions.

Bibliography

Treacy, M. M. J., & Borisenko, K. B. (2012). The Local Structure of Amorphous Silicon. Science, 335(6071), 950–953.

Authors 2
  1. M. M. J. Treacy (first)
  2. K. B. Borisenko (additional)
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Dates
Type When
Created 13 years, 6 months ago (Feb. 23, 2012, 2:27 p.m.)
Deposited 1 year, 7 months ago (Jan. 10, 2024, 9:30 a.m.)
Indexed 2 weeks, 4 days ago (Aug. 6, 2025, 9:15 a.m.)
Issued 13 years, 6 months ago (Feb. 24, 2012)
Published 13 years, 6 months ago (Feb. 24, 2012)
Published Print 13 years, 6 months ago (Feb. 24, 2012)
Funders 0

None

@article{Treacy_2012, title={The Local Structure of Amorphous Silicon}, volume={335}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1214780}, DOI={10.1126/science.1214780}, number={6071}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Treacy, M. M. J. and Borisenko, K. B.}, year={2012}, month=feb, pages={950–953} }