DOI: 10.1126/science.1199183. Layer-by-Layer Removal of Graphene for Device Patterning

Layer-by-Layer Removal of Graphene for Device Patterning

10.1126/science.1199183

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Reactions of graphene with zinc enable etching of a single graphene layer.

Bibliography

Dimiev, A., Kosynkin, D. V., Sinitskii, A., Slesarev, A., Sun, Z., & Tour, J. M. (2011). Layer-by-Layer Removal of Graphene for Device Patterning. Science, 331(6021), 1168â1172.

Authors 6

Ayrat Dimiev (first)
Dmitry V. Kosynkin (additional)
Alexander Sinitskii (additional)
Alexander Slesarev (additional)
Zhengzong Sun (additional)
James M. Tour (additional)

References 31 Referenced 216

10.1038/nmat1849
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10.1021/nl900811r
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10.1016/j.ssc.2009.02.042
K. Wasa S. Hayakawa Handbook of Sputter Deposition Technology: Principles Technology and Applications (Noyes Park Ridge NJ 1991).
10.1103/PhysRevB.53.R1725
10.1103/PhysRevB.60.6007
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10.1103/PhysRevB.48.6757
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10.1021/ef049951e

Dates

Type	When
Created	14 years, 5 months ago (March 5, 2011, 9:59 a.m.)
Deposited	1 year, 7 months ago (Jan. 10, 2024, 10:06 a.m.)
Indexed	1 day, 7 hours ago (Aug. 28, 2025, 8:48 a.m.)
Issued	14 years, 5 months ago (March 4, 2011)
Published	14 years, 5 months ago (March 4, 2011)
Published Print	14 years, 5 months ago (March 4, 2011)

Funders 0

None

BibTeX

@article{Dimiev_2011, title={Layer-by-Layer Removal of Graphene for Device Patterning}, volume={331}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1199183}, DOI={10.1126/science.1199183}, number={6021}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Dimiev, Ayrat and Kosynkin, Dmitry V. and Sinitskii, Alexander and Slesarev, Alexander and Sun, Zhengzong and Tour, James M.}, year={2011}, month=mar, pages={1168–1172} }

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