DOI: 10.1126/science.1184289. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

10.1126/science.1184289

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

The maximum switching frequency of these devices exceeds that of silicon transistors with similar gate-electrode dimensions.

Bibliography

Lin, Y.-M., Dimitrakopoulos, C., Jenkins, K. A., Farmer, D. B., Chiu, H.-Y., Grill, A., & Avouris, Ph. (2010). 100-GHz Transistors from Wafer-Scale Epitaxial Graphene. Science, 327(5966), 662â662.

Authors 7

Y.-M. Lin (first)
C. Dimitrakopoulos (additional)
K. A. Jenkins (additional)
D. B. Farmer (additional)
H.-Y. Chiu (additional)
A. Grill (additional)
Ph. Avouris (additional)

References 5 Referenced 2,252

I. Meric N. Baklitskaya P. Kim K. L. Shepard in Electron Devices Meeting 2008 (IEDM 2008) IEEE International San Francisco 15 to 17 December 2008 pp. 1–4. (10.1109/IEDM.2008.4796738)
10.1021/nl803316h
10.1109/LED.2009.2020699
10.1021/nl902788u
www.itrs.net/Links/2008ITRS/Home2008.htm

Dates

Type	When
Created	15 years, 6 months ago (Feb. 17, 2010, 12:27 p.m.)
Deposited	6 months ago (Feb. 18, 2025, 11:09 a.m.)
Indexed	20 hours, 36 minutes ago (Aug. 21, 2025, 2:21 p.m.)
Issued	15 years, 6 months ago (Feb. 5, 2010)
Published	15 years, 6 months ago (Feb. 5, 2010)
Published Print	15 years, 6 months ago (Feb. 5, 2010)

Funders 0

None

BibTeX

@article{Lin_2010, title={100-GHz Transistors from Wafer-Scale Epitaxial Graphene}, volume={327}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1184289}, DOI={10.1126/science.1184289}, number={5966}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Lin, Y.-M. and Dimitrakopoulos, C. and Jenkins, K. A. and Farmer, D. B. and Chiu, H.-Y. and Grill, A. and Avouris, Ph.}, year={2010}, month=feb, pages={662–662} }

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