DOI: 10.1126/science.1178606. Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires

Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires

10.1126/science.1178606

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Sharp Nanowires The potential for using nanowires in devices can be limited by the ability to synthesize them from two or more materials while maintaining compositional purity at the interfaces. Instead of using liquid droplets at the eutectic point when the melting point is at a minimum, Wen et al. (p. 1247 ) show that generating the wires at solid alloy catalysts allows fabrication of silicon germanium wires with atomically sharp interfaces. The system works well because an AlAu alloy composition was chosen in which Si and Ge have a low solubility but which have a high enough eutectic temperature so that nanowire growth is not limited by the reactivity of the Si and Ge precursors.

Bibliography

Wen, C.-Y., Reuter, M. C., Bruley, J., Tersoff, J., Kodambaka, S., Stach, E. A., & Ross, F. M. (2009). Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires. Science, 326(5957), 1247â1250.

Authors 7

C.-Y. Wen (first)
M. C. Reuter (additional)
J. Bruley (additional)
J. Tersoff (additional)
S. Kodambaka (additional)
E. A. Stach (additional)
F. M. Ross (additional)

References 29 Referenced 303

Dates

Type	When
Created	15 years, 8 months ago (Nov. 27, 2009, 6:05 p.m.)
Deposited	1 year, 7 months ago (Jan. 10, 2024, 2:54 a.m.)
Indexed	2 days, 4 hours ago (Aug. 19, 2025, 6:47 a.m.)
Issued	15 years, 8 months ago (Nov. 27, 2009)
Published	15 years, 8 months ago (Nov. 27, 2009)
Published Print	15 years, 8 months ago (Nov. 27, 2009)

Funders 0

None

BibTeX

@article{Wen_2009, title={Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires}, volume={326}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1178606}, DOI={10.1126/science.1178606}, number={5957}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Wen, C.-Y. and Reuter, M. C. and Bruley, J. and Tersoff, J. and Kodambaka, S. and Stach, E. A. and Ross, F. M.}, year={2009}, month=nov, pages={1247–1250} }

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  "abstract": "<jats:title>Sharp Nanowires</jats:title>\n          <jats:p>\n            The potential for using nanowires in devices can be limited by the ability to synthesize them from two or more materials while maintaining compositional purity at the interfaces. Instead of using liquid droplets at the eutectic point when the melting point is at a minimum,\n            <jats:bold>\n              Wen\n              <jats:italic>et al.</jats:italic>\n            </jats:bold>\n            (p.\n            <jats:related-article xmlns:xlink=\"http://www.w3.org/1999/xlink\" ext-link-type=\"doi\" page=\"1247\" related-article-type=\"in-this-issue\" vol=\"326\" xlink:href=\"10.1126/science.1178606\">1247</jats:related-article>\n            ) show that generating the wires at solid alloy catalysts allows fabrication of silicon germanium wires with atomically sharp interfaces. The system works well because an AlAu alloy composition was chosen in which Si and Ge have a low solubility but which have a high enough eutectic temperature so that nanowire growth is not limited by the reactivity of the Si and Ge precursors.\n          </jats:p>",
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