DOI: 10.1126/science.1171200. Polarization Control of Electron Tunneling into Ferroelectric Surfaces

Polarization Control of Electron Tunneling into Ferroelectric Surfaces

10.1126/science.1171200

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Ferroelectric Patterning with High Fields Ferroelectric oxides have a net polarization that can switch direction upon application of a sufficiently high electric field. In principle, a ferroelectric thin film should be able to act as a polar switch—tunneling an electron through the film would effectively switch on or off depending on the direction of the polarization. In practice, the length scale needed for a sufficiently small tunneling barrier is nearly the same as the scale at which films no longer support ferroelectricity. Maksymovych et al. (p. 1421 ) now show that the tip of an atomic force microscope can be used to pattern polarization domains in a thin film of lead zirconate titanate in high electric fields similar to those for field emission tips.

Bibliography

Maksymovych, P., Jesse, S., Yu, P., Ramesh, R., Baddorf, A. P., & Kalinin, S. V. (2009). Polarization Control of Electron Tunneling into Ferroelectric Surfaces. Science, 324(5933), 1421â1425.

Authors 6

Peter Maksymovych (first)
Stephen Jesse (additional)
Pu Yu (additional)
Ramamoorthy Ramesh (additional)
Arthur P. Baddorf (additional)
Sergei V. Kalinin (additional)

References 35 Referenced 459

10.1063/1.1654509
10.1109/JPROC.2003.811702
Binnig G., Rohrer H., IBM J. Res. Dev. 30, 4 (1986). / IBM J. Res. Dev. by Binnig G. (1986)
10.1038/nature06184
10.1038/nature02693
Esaki L., Laibowitz R. B., Stiles P. J., IBM Tech. Discl. Bull. 13, 2161 (1971). / IBM Tech. Discl. Bull. by Esaki L. (1971)
10.1103/PhysRevB.72.125341
10.1126/science.1126230
10.1021/nl803318d
10.1103/PhysRevLett.100.177601
10.1126/science.1098252
10.1038/nature01501
10.1126/science.1092508
10.1063/1.2337363
10.1038/nmat1860
10.1063/1.2841917
10.1038/nmat1614
10.1098/rspa.1928.0091
10.1038/nmat2114
10.1038/nmat2023
10.1080/00150190701261031
10.1063/1.124721
10.1088/0957-4484/18/46/465502
10.1103/PhysRevLett.73.2107
10.1103/PhysRevB.64.205310
10.1063/1.2337009
10.1063/1.124821
10.1080/00150190701454966
J. F. Scott Ferroelectric Memories (Springer New York 2000). (10.1007/978-3-662-04307-3)
10.1063/1.122374
10.1063/1.2148623
10.1063/1.2148622
S. M. Sze Semiconductor Devices: Physics and Technology 2nd Ed. (Wiley New York 2001).
Morozovska A. N., Eliseev E. A., Physica B 373, 54 (2006). (10.1016/j.physb.2005.11.049) / Physica B by Morozovska A. N. (2006)
10.1088/0957-4484/17/6/014

Dates

Type	When
Created	16 years, 2 months ago (June 11, 2009, 5:50 p.m.)
Deposited	1 year, 7 months ago (Jan. 10, 2024, 4:25 a.m.)
Indexed	2 weeks, 1 day ago (Aug. 5, 2025, 8:15 a.m.)
Issued	16 years, 2 months ago (June 12, 2009)
Published	16 years, 2 months ago (June 12, 2009)
Published Print	16 years, 2 months ago (June 12, 2009)

Funders 0

None

BibTeX

@article{Maksymovych_2009, title={Polarization Control of Electron Tunneling into Ferroelectric Surfaces}, volume={324}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1171200}, DOI={10.1126/science.1171200}, number={5933}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Maksymovych, Peter and Jesse, Stephen and Yu, Pu and Ramesh, Ramamoorthy and Baddorf, Arthur P. and Kalinin, Sergei V.}, year={2009}, month=jun, pages={1421–1425} }

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