DOI: 10.1126/science.1159725. Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States

Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States

10.1126/science.1159725

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

The efficiency of thermoelectric energy converters is limited by the material thermoelectric figure of merit ( zT ). The recent advances in zT based on nanostructures limiting the phonon heat conduction is nearing a fundamental limit: The thermal conductivity cannot be reduced below the amorphous limit. We explored enhancing the Seebeck coefficient through a distortion of the electronic density of states and report a successful implementation through the use of the thallium impurity levels in lead telluride (PbTe). Such band structure engineering results in a doubling of zT in p -type PbTe to above 1.5 at 773 kelvin. Use of this new physical principle in conjunction with nanostructuring to lower the thermal conductivity could further enhance zT and enable more widespread use of thermoelectric systems.

Bibliography

Heremans, J. P., Jovovic, V., Toberer, E. S., Saramat, A., Kurosaki, K., Charoenphakdee, A., Yamanaka, S., & Snyder, G. J. (2008). Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States. Science, 321(5888), 554â557.

Authors 8

Joseph P. Heremans (first)
Vladimir Jovovic (additional)
Eric S. Toberer (additional)
Ali Saramat (additional)
Ken Kurosaki (additional)
Anek Charoenphakdee (additional)
Shinsuke Yamanaka (additional)
G. Jeffrey Snyder (additional)

References 35 Referenced 3,729

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We have not been able to find the carrier-density dependence of the hole mobility for PbTe. For electrons at 300 K Î¼ e â 550 cm 2 /Vsat n = 5 Ã 10 19 cm â3 ( 32 ) whereas the ratio of electron to hole mobility at n â 3Ã 10 18 cm â3 and 300 K is 2.2 ( 33 ) so that we estimate the hole mobility to be about 250 cm 2 /Vs 5 Ã 10 19 cm â3 .
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Ravich ( 34 ) suggests that the energy dependence of the hole scattering on the resonant states (resonant scattering) increases S by increasing the second term d Î¼ /dE and therefore the low temperature zT .
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This work was supported by the BSST Corporation the State of Ohio Department of Development's Center for Photovoltaic Innovation of Commercialization (OSU) the Beckman Institute the Swedish Bengt Lundqvist Minne Foundation and Jet Propulsion Laboratory NASA (Caltech). Patent protection related to this work is pending.

Dates

Type	When
Created	17 years, 1 month ago (July 24, 2008, 5:24 p.m.)
Deposited	1 year, 7 months ago (Jan. 10, 2024, 3:19 a.m.)
Indexed	21 minutes ago (Aug. 31, 2025, 4:46 a.m.)
Issued	17 years, 1 month ago (July 25, 2008)
Published	17 years, 1 month ago (July 25, 2008)
Published Print	17 years, 1 month ago (July 25, 2008)

Funders 0

None

BibTeX

@article{Heremans_2008, title={Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States}, volume={321}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1159725}, DOI={10.1126/science.1159725}, number={5888}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Heremans, Joseph P. and Jovovic, Vladimir and Toberer, Eric S. and Saramat, Ali and Kurosaki, Ken and Charoenphakdee, Anek and Yamanaka, Shinsuke and Snyder, G. Jeffrey}, year={2008}, month=jul, pages={554–557} }

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      "unstructured": "Yu. I. Ravich, in CRC Handbook of Thermoelectrics, D. M. Rowe, Ed. (CRC Press, Boca Raton, FL, 1995), pp. 67\u00e2\u0080\u009381.",
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