Crossref journal-article
American Association for the Advancement of Science (AAAS)
Science (221)
Abstract

We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride–cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an “inverted” type at a critical thickness d c . We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.

Bibliography

Bernevig, B. A., Hughes, T. L., & Zhang, S.-C. (2006). Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells. Science, 314(5806), 1757–1761.

Authors 3
  1. B. Andrei Bernevig (first)
  2. Taylor L. Hughes (additional)
  3. Shou-Cheng Zhang (additional)
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Dates
Type When
Created 18 years, 8 months ago (Dec. 14, 2006, 2:55 p.m.)
Deposited 1 year, 7 months ago (Jan. 9, 2024, 11:49 p.m.)
Indexed 10 hours, 10 minutes ago (Aug. 22, 2025, 12:47 a.m.)
Issued 18 years, 8 months ago (Dec. 15, 2006)
Published 18 years, 8 months ago (Dec. 15, 2006)
Published Print 18 years, 8 months ago (Dec. 15, 2006)
Funders 0

None

@article{Bernevig_2006, title={Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells}, volume={314}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1133734}, DOI={10.1126/science.1133734}, number={5806}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Bernevig, B. Andrei and Hughes, Taylor L. and Zhang, Shou-Cheng}, year={2006}, month=dec, pages={1757–1761} }