Abstract
We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride–cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an “inverted” type at a critical thickness d c . We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.
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- We thank X. Dai Z. Fang F. D. M. Haldane A. H. MacDonald L. W. Molenkamp N. Nagaosa X.-L. Qi R. Roy and R. Winkler for discussions. B.A.B. acknowledges the hospitality of the Kavli Institute for Theoretical Physics at the University of California Santa Barbara where part of this work was performed. Supported by NSF grant DMR-0342832 and by the U.S. Department of Energy Office of Basic Energy Sciences under contract DE-AC03-76SF00515.
Dates
Type | When |
---|---|
Created | 18 years, 8 months ago (Dec. 14, 2006, 2:55 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 9, 2024, 11:49 p.m.) |
Indexed | 10 hours, 10 minutes ago (Aug. 22, 2025, 12:47 a.m.) |
Issued | 18 years, 8 months ago (Dec. 15, 2006) |
Published | 18 years, 8 months ago (Dec. 15, 2006) |
Published Print | 18 years, 8 months ago (Dec. 15, 2006) |
@article{Bernevig_2006, title={Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells}, volume={314}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1133734}, DOI={10.1126/science.1133734}, number={5806}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Bernevig, B. Andrei and Hughes, Taylor L. and Zhang, Shou-Cheng}, year={2006}, month=dec, pages={1757–1761} }