Abstract
Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor‐type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.
References
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Dates
Type | When |
---|---|
Created | 19 years, 5 months ago (March 23, 2006, 4:53 p.m.) |
Deposited | 1 year, 7 months ago (Jan. 9, 2024, 10:22 p.m.) |
Indexed | 1 month ago (July 30, 2025, 11:23 a.m.) |
Issued | 19 years, 5 months ago (March 24, 2006) |
Published | 19 years, 5 months ago (March 24, 2006) |
Published Print | 19 years, 5 months ago (March 24, 2006) |
@article{Chen_2006, title={An Integrated Logic Circuit Assembled on a Single Carbon Nanotube}, volume={311}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1122797}, DOI={10.1126/science.1122797}, number={5768}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Chen, Zhihong and Appenzeller, Joerg and Lin, Yu-Ming and Sippel-Oakley, Jennifer and Rinzler, Andrew G. and Tang, Jinyao and Wind, Shalom J. and Solomon, Paul M. and Avouris, Phaedon}, year={2006}, month=mar, pages={1735–1735} }