DOI: 10.1126/science.1121401. A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates

A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates

10.1126/science.1121401

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

We have produced a stretchable form of silicon that consists of submicrometer single-crystal elements structured into shapes with microscale, periodic, wavelike geometries. When supported by an elastomeric substrate, this “wavy” silicon can be reversibly stretched and compressed to large levels of strain without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding substantial strains in the silicon itself. Dielectrics, patterns of dopants, electrodes, and other elements directly integrated with the silicon yield fully formed, high-performance “wavy” metal oxide semiconductor field-effect transistors, p-n diodes, and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.

Bibliography

Khang, D.-Y., Jiang, H., Huang, Y., & Rogers, J. A. (2006). A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates. Science, 311(5758), 208â212.

Authors 4

Dahl-Young Khang (first)
Hanqing Jiang (additional)
Young Huang (additional)
John A. Rogers (additional)

References 34 Referenced 1,599

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10.1021/la991302l
10.1038/nmat1175
Materials and methods are available as supporting material on Science Online .
We thank T. Banks for help with processing using the facilities at the Frederick Seitz Materials Research Laboratory. This work was supported by the Defense Advanced Research Projects Agency–funded Air Force Research Laboratory–managed Macroelectronics Program Contract FA8650-04-C-7101 by the U.S. Department of Energy under grant DEFG02-91-ER45439 and by NSF under grant DMI-0328162.

Dates

Type	When
Created	19 years, 8 months ago (Dec. 15, 2005, 8:44 p.m.)
Deposited	1 year, 7 months ago (Jan. 9, 2024, 9:32 p.m.)
Indexed	9 minutes ago (Aug. 28, 2025, 10:16 p.m.)
Issued	19 years, 7 months ago (Jan. 13, 2006)
Published	19 years, 7 months ago (Jan. 13, 2006)
Published Print	19 years, 7 months ago (Jan. 13, 2006)

Funders 0

None

BibTeX

@article{Khang_2006, title={A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substrates}, volume={311}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1121401}, DOI={10.1126/science.1121401}, number={5758}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Khang, Dahl-Young and Jiang, Hanqing and Huang, Young and Rogers, John A.}, year={2006}, month=jan, pages={208–212} }

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