DOI: 10.1126/science.1105514. Observation of the Spin Hall Effect in Semiconductors

Observation of the Spin Hall Effect in Semiconductors

10.1126/science.1105514

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

Bibliography

Kato, Y. K., Myers, R. C., Gossard, A. C., & Awschalom, D. D. (2004). Observation of the Spin Hall Effect in Semiconductors. Science, 306(5703), 1910â1913.

Authors 4

Y. K. Kato (first)
R. C. Myers (additional)
A. C. Gossard (additional)
D. D. Awschalom (additional)

References 29 Referenced 2,296

C. L. Chien C. R. Westgate Eds. The Hall Effect and Its Applications (Plenum New York 1980). (10.1007/978-1-4757-1367-1)
R. S. Popovic Hall Effect Devices (Institute of Physics Bristol UK ed. 2 2004). (10.1887/0750308559)
10.1103/RevModPhys.67.357
10.1103/RevModPhys.71.S298
10.1126/science.1094383
10.1103/PhysRevB.11.3918
M. I. D'yakonov, V. I. Perel, JETP Lett.13, 467 (1971). / JETP Lett. (1971)
10.1016/0375-9601(71)90196-4
10.1103/PhysRevLett.83.1834
10.1103/PhysRevLett.85.393
10.1126/science.1087128
10.1103/PhysRevLett.92.126603
10.1103/PhysRevB.68.241315
10.1103/PhysRevB.69.165315
10.1103/PhysRevB.70.041303
B. A. Bernevig S. C. Zhang www.arXiv.org/abs/condmat/0408442 (2004).
10.1103/PhysRevLett.80.4313
10.1103/PhysRevB.68.041307
10.1103/PhysRevB.56.7574
F. Meier B. P. Zakharchenya Eds. Optical Orientation (Elsevier Amsterdam 1984).
The electron g factor is –0.44 for the unstrained GaAs sample and –0.63 for the strained InGaAs sample as determined by time-resolved Faraday rotation measurements ( 19 ).
10.1103/PhysRevLett.93.176601
10.1103/PhysRev.100.580
10.1038/nature02202
10.1088/0268-1242/11/5/004
10.1063/1.341232
The strained InGaAs sample is the sample E used in previous work ( 22 24 ). We use the value of current-induced spin polarization efficiency η as defined in ( 22 ) to obtain the calibration and assume that the ratio of KR to spin polarization is within 10% on the samples from the same wafer that are measured in these experiments. The systematic error introduced in this calibration is +48%/–38%.
10.1103/PhysRevLett.78.1335
Supported by the Defense Advanced Research Projects Agency the Defense Microelectronics Activity and NSF.

Dates

Type	When
Created	20 years, 9 months ago (Nov. 11, 2004, 8:24 p.m.)
Deposited	1 year, 7 months ago (Jan. 9, 2024, 11:18 p.m.)
Indexed	1 day, 4 hours ago (Aug. 26, 2025, 3:14 a.m.)
Issued	20 years, 8 months ago (Dec. 10, 2004)
Published	20 years, 8 months ago (Dec. 10, 2004)
Published Print	20 years, 8 months ago (Dec. 10, 2004)

Funders 0

None

BibTeX

@article{Kato_2004, title={Observation of the Spin Hall Effect in Semiconductors}, volume={306}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1105514}, DOI={10.1126/science.1105514}, number={5703}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Kato, Y. K. and Myers, R. C. and Gossard, A. C. and Awschalom, D. D.}, year={2004}, month=dec, pages={1910–1913} }

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