DOI: 10.1126/science.1083212. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

10.1126/science.1083212

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science (221)

Abstract

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

Bibliography

Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., & Hosono, H. (2003). Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor. Science, 300(5623), 1269â1272.

Authors 6

Kenji Nomura (first)
Hiromichi Ohta (additional)
Kazushige Ueda (additional)
Toshio Kamiya (additional)
Masahiro Hirano (additional)
Hideo Hosono (additional)

References 20 Referenced 1,736

10.1038/39999
10.1063/1.1498874
10.4028/www.scientific.net/MSF.389-393.1069
10.1038/40087
10.1063/1.125171
H. Yanagiet al., Solid State Commun.121, 615 (2001). / Solid State Commun. (2001)
10.1063/1.127015
10.1063/1.115759
10.1063/1.118180
10.1063/1.1542677
10.1006/jssc.1995.1198
10.1006/jssc.1998.7856
H. Ohtaet al., Adv. Funct. Mater.13, 1398 (2003). / Adv. Funct. Mater. (2003)
K. Nomuraet al., Thin Solid Films411, 147 (2000). / Thin Solid Films (2000)
10.1063/1.1494853
10.1557/PROC-570-309
M. Orita, H. Ohta, M. Hirano, S. Narushima, H. Hosono, Philos. Mag. B81, 501 (2001). / Philos. Mag. B (2001)
The thermal annealing temperature can be reduced to 1000°C if the annealing duration is extended to 60 min.
Y. S. Lin, R. Puthenkovilakam, J. P. Chang, Appl. Phys. Lett.81, 9 (2002). / Appl. Phys. Lett. (2002)
The device showed a hysteresis with ∼1 V width in the transfer characteristics. The density of interface trap state D it was estimated to be ∼10 12 eV - 1 cm - 2 from the subthreshold slope. This value is rather large relative to that of optimized Si metal oxide semiconductor FETs ( D it ∼ 10 10 eV - 1 cm - 2 ). These values will be improved by further optimization of the insulator-channel interface including the fabrication condition of a-HfO 2 and the reduction of interface contamination due to air exposure before the formation of an a-HfO 2 layer.

Dates

Type	When
Created	22 years, 3 months ago (May 22, 2003, 4:33 p.m.)
Deposited	1 year, 7 months ago (Jan. 9, 2024, 11:13 p.m.)
Indexed	4 days, 14 hours ago (Aug. 27, 2025, 12:39 p.m.)
Issued	22 years, 3 months ago (May 23, 2003)
Published	22 years, 3 months ago (May 23, 2003)
Published Print	22 years, 3 months ago (May 23, 2003)

Funders 0

None

BibTeX

@article{Nomura_2003, title={Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor}, volume={300}, ISSN={1095-9203}, url={http://dx.doi.org/10.1126/science.1083212}, DOI={10.1126/science.1083212}, number={5623}, journal={Science}, publisher={American Association for the Advancement of Science (AAAS)}, author={Nomura, Kenji and Ohta, Hiromichi and Ueda, Kazushige and Kamiya, Toshio and Hirano, Masahiro and Hosono, Hideo}, year={2003}, month=may, pages={1269–1272} }

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