DOI: 10.1126/sciadv.abo0773. Phase and polarization modulation in two-dimensional In <sub>2</sub> Se <sub>3</sub> via in situ transmission electron microscopy

Phase and polarization modulation in two-dimensional In 2 Se 3 via in situ transmission electron microscopy

10.1126/sciadv.abo0773

Crossref journal-article

American Association for the Advancement of Science (AAAS)

Science Advances (221)

Abstract

Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In 2 Se 3 with bistable out-of-plane ferroelectric (FE) α phase and antiferroelectric (AFE) β′ phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In 2 Se 3 remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In 2 Se 3 . We achieve reversible AFE and out-of-plane FE phase transition in 2D In 2 Se 3 by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In 2 Se 3 can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.

Bibliography

Zheng, X., Han, W., Yang, K., Wong, L. W., Tsang, C. S., Lai, K. H., Zheng, F., Yang, T., Lau, S. P., Ly, T. H., Yang, M., & Zhao, J. (2022). Phase and polarization modulation in two-dimensional In 2 Se 3 via in situ transmission electron microscopy. Science Advances, 8(42).

Authors 12

Xiaodong Zheng (first)
Wei Han (additional)
Ke Yang (additional)
Lok Wing Wong (additional)
Chi Shing Tsang (additional)
Ka Hei Lai (additional)
Fangyuan Zheng (additional)
Tiefeng Yang (additional)
Shu Ping Lau (additional)
Thuc Hue Ly (additional)
Ming Yang (additional)
Jiong Zhao (additional)

References 55 Referenced 48

Dates

Type	When
Created	2 years, 9 months ago (Oct. 21, 2022, 1:58 p.m.)
Deposited	1 year, 7 months ago (Jan. 9, 2024, 6:05 p.m.)
Indexed	35 minutes ago (Aug. 21, 2025, 6:13 a.m.)
Issued	2 years, 10 months ago (Oct. 21, 2022)
Published	2 years, 10 months ago (Oct. 21, 2022)
Published Print	2 years, 10 months ago (Oct. 21, 2022)

Funders 0

None

BibTeX

@article{Zheng_2022, title={Phase and polarization modulation in two-dimensional In 2 Se 3 via in situ transmission electron microscopy}, volume={8}, ISSN={2375-2548}, url={http://dx.doi.org/10.1126/sciadv.abo0773}, DOI={10.1126/sciadv.abo0773}, number={42}, journal={Science Advances}, publisher={American Association for the Advancement of Science (AAAS)}, author={Zheng, Xiaodong and Han, Wei and Yang, Ke and Wong, Lok Wing and Tsang, Chi Shing and Lai, Ka Hei and Zheng, Fangyuan and Yang, Tiefeng and Lau, Shu Ping and Ly, Thuc Hue and Yang, Ming and Zhao, Jiong}, year={2022}, month=oct }

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  "abstract": "<jats:p>\n            Phase transitions in two-dimensional (2D) materials promise reversible modulation of material physical and chemical properties in a wide range of applications. 2D van der Waals layered In\n            <jats:sub>2</jats:sub>\n            Se\n            <jats:sub>3</jats:sub>\n            with bistable out-of-plane ferroelectric (FE) \u03b1 phase and antiferroelectric (AFE) \u03b2\u2032 phase is particularly attractive for its electronic applications. However, reversible phase transition in 2D In\n            <jats:sub>2</jats:sub>\n            Se\n            <jats:sub>3</jats:sub>\n            remains challenging. Here, we introduce two factors, dimension (thickness) and strain, which can effectively modulate the phases of 2D In\n            <jats:sub>2</jats:sub>\n            Se\n            <jats:sub>3</jats:sub>\n            . We achieve reversible AFE and out-of-plane FE phase transition in 2D In\n            <jats:sub>2</jats:sub>\n            Se\n            <jats:sub>3</jats:sub>\n            by delicate strain control inside a transmission electron microscope. In addition, the polarizations in 2D FE In\n            <jats:sub>2</jats:sub>\n            Se\n            <jats:sub>3</jats:sub>\n            can also be manipulated in situ at the nanometer-sized contacts, rendering remarkable memristive behavior. Our in situ transmission electron microscopy (TEM) work paves a previously unidentified way for manipulating the correlated FE phases and highlights the great potentials of 2D ferroelectrics for nanoelectromechanical and memory device applications.\n          </jats:p>",
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