DOI: 10.1117/12.2013532. C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices

C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices

10.1117/12.2013532

Crossref proceedings-article

SPIE

SPIE Proceedings (189)

Bibliography

Nevosad, A., Hofstaetter, M., Wiessner, M., Supancic, P., & Teichert, C. (2013). C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices. Oxide-Based Materials and Devices IV, 8626, 862618.

Authors 5

A. Nevosad (first)
M. Hofstaetter (additional)
M. Wiessner (additional)
P. Supancic (additional)
C. Teichert (additional)

References 0 Referenced 5

None

Dates

Type	When
Created	12 years, 5 months ago (March 18, 2013, 7:25 p.m.)
Deposited	11 years, 8 months ago (Dec. 11, 2013, 8:03 a.m.)
Indexed	1 year ago (Sept. 4, 2024, 2:51 p.m.)
Issued	12 years, 5 months ago (March 18, 2013)
Published	12 years, 5 months ago (March 18, 2013)
Published Print	12 years, 5 months ago (March 18, 2013)

Funders 0

None

BibTeX

@inproceedings{Nevosad_2013, title={C-AFM and KPFM approach to investigate the electrical properties of single grain boundaries in ZnO varistor devices}, volume={8626}, ISSN={0277-786X}, url={http://dx.doi.org/10.1117/12.2013532}, DOI={10.1117/12.2013532}, booktitle={Oxide-based Materials and Devices IV}, publisher={SPIE}, author={Nevosad, A. and Hofstaetter, M. and Wiessner, M. and Supancic, P. and Teichert, C.}, editor={Teherani, Ferechteh Hosseini and Look, David C. and Rogers, David J.}, year={2013}, month=mar, pages={862618} }

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