Abstract
We report the direct observation of SiGa donors in the top six layers of GaAs(110). Surface SiGa has a localized electronic feature due to its dangling bond, while subsurface SiGa produces delocalized protrusions in filled and empty state scanning tunneling microscopy images, with a full width at half-maximum of ∼25 Å and a height from ∼0.2 to 2 Å, depending on the sample bias and location under the surface. The delocalized features of subsurface SiGa can be understood in terms of the perturbation of the local band structure by the Coulomb potential of SiGa.
Bibliography
Zheng, J. F., Liu, X., Weber, E. R., Ogletree, D. F., & Salmeron, M. (1994). Si donors (SiGa) in GaAs observed by scanning tunneling microscopy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 12(3), 2104â2106.
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 27, 2002, 5:12 a.m.) |
Deposited | 2 years ago (Aug. 2, 2023, 7:27 p.m.) |
Indexed | 1 month, 2 weeks ago (July 12, 2025, 6:50 p.m.) |
Issued | 31 years, 3 months ago (May 1, 1994) |
Published | 31 years, 3 months ago (May 1, 1994) |
Published Print | 31 years, 3 months ago (May 1, 1994) |
@article{Zheng_1994, title={Si donors (SiGa) in GaAs observed by scanning tunneling microscopy}, volume={12}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.587716}, DOI={10.1116/1.587716}, number={3}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Zheng, J. F. and Liu, X. and Weber, E. R. and Ogletree, D. F. and Salmeron, M.}, year={1994}, month=may, pages={2104–2106} }