DOI: 10.1116/1.585004. Band offset measurements for AlSb/ZnTe heterojunctions

Band offset measurements for AlSb/ZnTe heterojunctions

10.1116/1.585004

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena (20)

Abstract

Core level photoemission measurements have been made for thin (40 Å) AlSb heterojunctions grown on ZnTe. The room temperature valence band offset we obtain is 0.35±0.11 eV and the heterojunction is type I (electrons and holes confined in AlSb). The Γ(ZnTe)–Δ(AlSb) conduction-band offset would then be 0.28 eV. The AlSb growth temperature was reduced to 325 °C in order to suppress interfacial reactions. Raman scattering indicates good crystalline quality for this growth temperature. Heterojunctions annealed in vacuo at 375 °C exhibit interfacial reactions which liberate elemental Te or possibly Al2Te3.

Bibliography

Schwartz, G. P., Gualtieri, G. J., Feldman, R. D., Austin, R. F., & Nuzzo, R. G. (1990). Band offset measurements for AlSb/ZnTe heterojunctions. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 8(4), 747â750.

Authors 5

G. P. Schwartz (first)
G. J. Gualtieri (additional)
R. D. Feldman (additional)
R. F. Austin (additional)
R. G. Nuzzo (additional)

References 0 Referenced 10

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:24 a.m.)
Deposited	2 years, 1 month ago (July 6, 2023, 7:38 p.m.)
Indexed	1 year, 2 months ago (June 6, 2024, 10:04 a.m.)
Issued	35 years, 1 month ago (July 1, 1990)
Published	35 years, 1 month ago (July 1, 1990)
Published Print	35 years, 1 month ago (July 1, 1990)

Funders 0

None

BibTeX

@article{Schwartz_1990, title={Band offset measurements for AlSb/ZnTe heterojunctions}, volume={8}, ISSN={2327-9877}, url={http://dx.doi.org/10.1116/1.585004}, DOI={10.1116/1.585004}, number={4}, journal={Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena}, publisher={American Vacuum Society}, author={Schwartz, G. P. and Gualtieri, G. J. and Feldman, R. D. and Austin, R. F. and Nuzzo, R. G.}, year={1990}, month=jul, pages={747–750} }

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