DOI: 10.1116/1.584667. Fabrication of electron beam defined ultrasmall Ohmic contacts for III

Fabrication of electron beam defined ultrasmall Ohmic contacts for III–V semiconductors

10.1116/1.584667

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena (20)

Abstract

The development of nanoelectronic devices calls for Ohmic contacts of very small dimensions. The size dependence of both alloyed and nonalloyed contacts to GaAs and InGaAs is investigated. It is found that alloyed contacts to GaAs fail to achieve Ohmic contact for contacts below 3000 Å in diameter, while molecular-beam epitaxy grown heavily doped InGaAs on GaAs nonalloyed Ohmic contacts can be formed with size as small as 1500 Å.

Bibliography

Randall, J. N., Yang, C. H., Kao, Y. C., & Moore, T. M. (1989). Fabrication of electron beam defined ultrasmall Ohmic contacts for IIIâV semiconductors. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 7(6), 2007â2010.

Authors 4

J. N. Randall (first)
C. H. Yang (additional)
Y. C. Kao (additional)
T. M. Moore (additional)

References 0 Referenced 8

None

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:24 a.m.)
Deposited	2 years ago (Aug. 7, 2023, 4:32 p.m.)
Indexed	1 year, 6 months ago (Feb. 2, 2024, 10:59 p.m.)
Issued	35 years, 9 months ago (Nov. 1, 1989)
Published	35 years, 9 months ago (Nov. 1, 1989)
Published Print	35 years, 9 months ago (Nov. 1, 1989)

Funders 0

None

BibTeX

@article{Randall_1989, title={Fabrication of electron beam defined ultrasmall Ohmic contacts for III–V semiconductors}, volume={7}, ISSN={2327-9877}, url={http://dx.doi.org/10.1116/1.584667}, DOI={10.1116/1.584667}, number={6}, journal={Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena}, publisher={American Vacuum Society}, author={Randall, J. N. and Yang, C. H. and Kao, Y. C. and Moore, T. M.}, year={1989}, month=nov, pages={2007–2010} }

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