Abstract
An experimental high resolution e-beam system has been developed for direct deposition of microstructures with feature size ≂0.1 μm and below. This system is used to study various aspects of high resolution direct e-beam deposition process, i.e., physical factors which govern the resolution of the process, film characteristics and properties, nucleation of film growth, and pattern aspect ratio capability. For direct e-beam deposition of Au, using organometallic complexes, features with minimum linewidth of ≂30 nm and center-to-center feature spacing as small as 50 nm have been achieved. These represent the finest and densest features yet fabricated using the organometallic Au complexes. Potential applications of the technique for high resolution mask repair, fabrication of two- or three-dimensional nanometer scale devices, sensors and transducers for a variety of fundamental physics studies will be discussed.
Dates
Type | When |
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Created | 23 years, 1 month ago (July 27, 2002, 5:16 a.m.) |
Deposited | 2 years ago (Aug. 7, 2023, 4:33 p.m.) |
Indexed | 11 months, 1 week ago (Sept. 20, 2024, 11:34 a.m.) |
Issued | 35 years, 9 months ago (Nov. 1, 1989) |
Published | 35 years, 9 months ago (Nov. 1, 1989) |
Published Print | 35 years, 9 months ago (Nov. 1, 1989) |
@article{Lee_1989, title={Direct electron-beam patterning for nanolithography}, volume={7}, ISSN={2327-9877}, url={http://dx.doi.org/10.1116/1.584652}, DOI={10.1116/1.584652}, number={6}, journal={Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena}, publisher={American Vacuum Society}, author={Lee, K. L. and Hatzakis, M.}, year={1989}, month=nov, pages={1941–1946} }