Abstract
Epitaxial crystal growth is studied via a molecular dynamics simulation and an atomistic energetics calculation. It is found that: (i) pseudomorphic growth can be more easily achieved if the lattice constant of the absorbate is smaller than that of the substrate; (ii) the best epitaxial growth for the Lennard-Jones (LJ) system is achieved for the face-centered cubic (fcc)(111) orientation at around one-half the melting temperature of the solid. We also investigate diffusion of a Si atom on the Si(111) surface using the Stillinger–Weber three-body potential.
Dates
Type | When |
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Created | 23 years, 1 month ago (July 27, 2002, 5:24 a.m.) |
Deposited | 2 years, 2 months ago (July 6, 2023, 11:24 p.m.) |
Indexed | 2 years, 2 months ago (July 6, 2023, 11:40 p.m.) |
Issued | 38 years, 2 months ago (July 1, 1987) |
Published | 38 years, 2 months ago (July 1, 1987) |
Published Print | 38 years, 2 months ago (July 1, 1987) |
@article{Das_Sarma_1987, title={Atomistic numerical simulation of epitaxial crystal growth}, volume={5}, ISSN={2327-9877}, url={http://dx.doi.org/10.1116/1.583707}, DOI={10.1116/1.583707}, number={4}, journal={Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena}, publisher={American Vacuum Society}, author={Das Sarma, S. and Paik, S. M. and Khor, K. E. and Kobayashi, A.}, year={1987}, month=jul, pages={1179–1183} }