Crossref journal-article
American Vacuum Society
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena (20)
Abstract

Epitaxial crystal growth is studied via a molecular dynamics simulation and an atomistic energetics calculation. It is found that: (i) pseudomorphic growth can be more easily achieved if the lattice constant of the absorbate is smaller than that of the substrate; (ii) the best epitaxial growth for the Lennard-Jones (LJ) system is achieved for the face-centered cubic (fcc)(111) orientation at around one-half the melting temperature of the solid. We also investigate diffusion of a Si atom on the Si(111) surface using the Stillinger–Weber three-body potential.

Bibliography

Das Sarma, S., Paik, S. M., Khor, K. E., & Kobayashi, A. (1987). Atomistic numerical simulation of epitaxial crystal growth. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 5(4), 1179–1183.

Authors 4
  1. S. Das Sarma (first)
  2. S. M. Paik (additional)
  3. K. E. Khor (additional)
  4. A. Kobayashi (additional)
References 0 Referenced 27

None

Dates
Type When
Created 23 years, 1 month ago (July 27, 2002, 5:24 a.m.)
Deposited 2 years, 2 months ago (July 6, 2023, 11:24 p.m.)
Indexed 2 years, 2 months ago (July 6, 2023, 11:40 p.m.)
Issued 38 years, 2 months ago (July 1, 1987)
Published 38 years, 2 months ago (July 1, 1987)
Published Print 38 years, 2 months ago (July 1, 1987)
Funders 0

None

@article{Das_Sarma_1987, title={Atomistic numerical simulation of epitaxial crystal growth}, volume={5}, ISSN={2327-9877}, url={http://dx.doi.org/10.1116/1.583707}, DOI={10.1116/1.583707}, number={4}, journal={Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena}, publisher={American Vacuum Society}, author={Das Sarma, S. and Paik, S. M. and Khor, K. E. and Kobayashi, A.}, year={1987}, month=jul, pages={1179–1183} }