DOI: 10.1116/1.583012. Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment

Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment

10.1116/1.583012

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena (20)

Abstract

The valence band offset in AlAs/GaAs heterojunctions is found to be 0.45±0.05 eV from analysis of charge transfer versus undoped spacer layer thickness. This result and several recent experiments on AlxGa1−xAs/GaAs heterojunctions indicate that the valence band offset is approximately linear in AlAs fraction x over the entire alloy composition range and more than twice the previously accepted value. The relation between heterojunction band offsets and Fermi level pinning for metals on semiconductors is discussed.

Bibliography

Wang, W. I., & Stern, F. (1985). Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 3(4), 1280â1284.

Authors 2

W. I. Wang (first)
Frank Stern (additional)

References 0 Referenced 91

None

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:24 a.m.)
Deposited	2 years, 1 month ago (July 6, 2023, 10:30 p.m.)
Indexed	1 year, 5 months ago (March 9, 2024, 12:29 a.m.)
Issued	40 years, 1 month ago (July 1, 1985)
Published	40 years, 1 month ago (July 1, 1985)
Published Print	40 years, 1 month ago (July 1, 1985)

Funders 0

None

BibTeX

@article{Wang_1985, title={Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment}, volume={3}, ISSN={2327-9877}, url={http://dx.doi.org/10.1116/1.583012}, DOI={10.1116/1.583012}, number={4}, journal={Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena}, publisher={American Vacuum Society}, author={Wang, W. I. and Stern, Frank}, year={1985}, month=jul, pages={1280–1284} }

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