Abstract
Various liquid metal alloy ion sources and a 100 keV mass separated focused ion beam system have been fabricated and their basic characteristics have been measured. These are mass spectra, energy spread and angular current intensity for ion sources, and focusing characteristics of the system. It was observed that Be–Si–Au ternary alloy ion sources produce doubly charged Be and Si ions and the importance of these ion sources is demonstrated by fabricating a GaAs JFET using a maskless ion implantation technique and by PMMA resist exposure.
Dates
Type | When |
---|---|
Created | 23 years ago (July 27, 2002, 5:22 a.m.) |
Deposited | 2 years, 1 month ago (July 6, 2023, 11:21 p.m.) |
Indexed | 1 year, 3 months ago (May 19, 2024, 1:04 a.m.) |
Issued | 41 years, 10 months ago (Oct. 1, 1983) |
Published | 41 years, 10 months ago (Oct. 1, 1983) |
Published Print | 41 years, 10 months ago (Oct. 1, 1983) |
@article{Shiokawa_1983, title={100 keV focused ion beam system with a E×B mass filter for maskless ion implantation}, volume={1}, ISSN={2327-9877}, url={http://dx.doi.org/10.1116/1.582646}, DOI={10.1116/1.582646}, number={4}, journal={Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena}, publisher={American Vacuum Society}, author={Shiokawa, Takao and Kim, Pil Hyon and Toyoda, Koichi and Namba, Susumu and Matsui, Takao and Gamo, Kenji}, year={1983}, month=oct, pages={1117–1120} }