DOI: 10.1116/1.577259. Characterization of epitaxial thin films by x-ray diffraction

Characterization of epitaxial thin films by x-ray diffraction

10.1116/1.577259

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

X-ray diffraction has been used to characterize thin epitaxial films. A new method, grazing-incidence diffraction, with the probing direction parallel to the interface is discussed and applied to several examples. The strain in thin copper films deposited on the basal plane of sapphire was determined in two directions: perpendicular to the interface by symmetric Bragg reflection and parallel to it by grazing-incidence diffraction. Finally, measurements of the lattice strain due to the excitation of electrons from DX centers in heavily tin-doped GaAlAs films on GaAs substrates at low temperature on a triple-crystal diffractometer are presented.

Bibliography

SegmÃ¼ller, A. (1991). Characterization of epitaxial thin films by x-ray diffraction. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 9(4), 2477â2482.

Authors 1

Armin Segmüller (first)

References 0 Referenced 30

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:21 a.m.)
Deposited	2 years, 1 month ago (July 9, 2023, 10:34 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 2:27 p.m.)
Issued	34 years, 2 months ago (July 1, 1991)
Published	34 years, 2 months ago (July 1, 1991)
Published Print	34 years, 2 months ago (July 1, 1991)

Funders 0

None

BibTeX

@article{Segm_ller_1991, title={Characterization of epitaxial thin films by x-ray diffraction}, volume={9}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.577259}, DOI={10.1116/1.577259}, number={4}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Segmüller, Armin}, year={1991}, month=jul, pages={2477–2482} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        10
      ]
    ],
    "date-time": "2024-02-10T19:27:07Z",
    "timestamp": 1707593227997
  },
  "reference-count": 0,
  "publisher": "American Vacuum Society",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1991,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p>X-ray diffraction has been used to characterize thin epitaxial films. A new method, grazing-incidence diffraction, with the probing direction parallel to the interface is discussed and applied to several examples. The strain in thin copper films deposited on the basal plane of sapphire was determined in two directions: perpendicular to the interface by symmetric Bragg reflection and parallel to it by grazing-incidence diffraction. Finally, measurements of the lattice strain due to the excitation of electrons from DX centers in heavily tin-doped GaAlAs films on GaAs substrates at low temperature on a triple-crystal diffractometer are presented.</jats:p>",
  "DOI": "10.1116/1.577259",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        27
      ]
    ],
    "date-time": "2002-07-27T09:21:33Z",
    "timestamp": 1027761693000
  },
  "page": "2477-2482",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 30,
  "title": "Characterization of epitaxial thin films by x-ray diffraction",
  "prefix": "10.1116",
  "volume": "9",
  "author": [
    {
      "given": "Armin",
      "family": "Segm\u00fcller",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Research Division, Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598"
        }
      ]
    }
  ],
  "member": "20",
  "container-title": "Journal of Vacuum Science &amp; Technology A: Vacuum, Surfaces, and Films",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/9/4/2477/12099042/2477_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/9/4/2477/12099042/2477_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        10
      ]
    ],
    "date-time": "2023-07-10T02:34:41Z",
    "timestamp": 1688956481000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jva/article/9/4/2477/462561/Characterization-of-epitaxial-thin-films-by-x-ray"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1991,
        7,
        1
      ]
    ]
  },
  "references-count": 0,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          1991,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.577259",
  "relation": {},
  "ISSN": [
    "0734-2101",
    "1520-8559"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1991,
        7
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1991,
        7,
        1
      ]
    ]
  }
}