DOI: 10.1116/1.573015. Static SIMS applications—From silicon single crystal oxidation to DNA sequencing

Static SIMS applications—From silicon single crystal oxidation to DNA sequencing

10.1116/1.573015

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

Static secondary ion mass spectrometry is a hydrogen-, isotope-, and compound-sensitive technique for monolayer analysis. Originally it was applied mainly for the determination of surface composition in surface reaction studies and for the investigation of the secondary ion formation process itself. More recently it has been shown that static SIMS allows high sensitivity detection identification, and structural analysis of large and thermally labile organic molecules such as, e.g., oligopeptides, -nucleotides, and -saccharides. This opens new fields of applications in the life sciences and many related areas.

Bibliography

Benninghoven, A. (1985). Static SIMS applicationsâFrom silicon single crystal oxidation to DNA sequencing. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 3(3), 451â460.

Authors 1

A. Benninghoven (first)

References 0 Referenced 62

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:15 a.m.)
Deposited	2 years, 2 months ago (June 26, 2023, 3:24 p.m.)
Indexed	1 day, 6 hours ago (Sept. 4, 2025, 9:27 a.m.)
Issued	40 years, 4 months ago (May 1, 1985)
Published	40 years, 4 months ago (May 1, 1985)
Published Print	40 years, 4 months ago (May 1, 1985)

Funders 0

None

BibTeX

@article{Benninghoven_1985, title={Static SIMS applications—From silicon single crystal oxidation to DNA sequencing}, volume={3}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.573015}, DOI={10.1116/1.573015}, number={3}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Benninghoven, A.}, year={1985}, month=may, pages={451–460} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        9,
        4
      ]
    ],
    "date-time": "2025-09-04T13:27:41Z",
    "timestamp": 1756992461693
  },
  "reference-count": 0,
  "publisher": "American Vacuum Society",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1985,
        5,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Static secondary ion mass spectrometry is a hydrogen-, isotope-, and compound-sensitive technique for monolayer analysis. Originally it was applied mainly for the determination of surface composition in surface reaction studies and for the investigation of the secondary ion formation process itself. More recently it has been shown that static SIMS allows high sensitivity detection identification, and structural analysis of large and thermally labile organic molecules such as, e.g., oligopeptides, -nucleotides, and -saccharides. This opens new fields of applications in the life sciences and many related areas.</jats:p>",
  "DOI": "10.1116/1.573015",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        27
      ]
    ],
    "date-time": "2002-07-27T09:15:22Z",
    "timestamp": 1027761322000
  },
  "page": "451-460",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 62,
  "title": "Static SIMS applications\u2014From silicon single crystal oxidation to DNA sequencing",
  "prefix": "10.1116",
  "volume": "3",
  "author": [
    {
      "given": "A.",
      "family": "Benninghoven",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Physikalisches Institut der Universit\u00e4t M\u00fcnster, Domagkstrasse 75, D-4400 M\u00fcnster, Federal Republic of Germany"
        }
      ]
    }
  ],
  "member": "20",
  "container-title": "Journal of Vacuum Science &amp; Technology A: Vacuum, Surfaces, and Films",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/3/3/451/12126199/451_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/3/3/451/12126199/451_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        26
      ]
    ],
    "date-time": "2023-06-26T19:24:33Z",
    "timestamp": 1687807473000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jva/article/3/3/451/212670/Static-SIMS-applications-From-silicon-single"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1985,
        5,
        1
      ]
    ]
  },
  "references-count": 0,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          1985,
          5,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.573015",
  "relation": {},
  "ISSN": [
    "0734-2101",
    "1520-8559"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1985,
        5
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1985,
        5,
        1
      ]
    ]
  }
}