DOI: 10.1116/1.571806. Mott insulator model of the Si(111)

Mott insulator model of the Si(111)–(2×1) surface

10.1116/1.571806

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

Theoretical cluster calculations for the Si(111)–(2×1) surface lead to a description in which there is a singly occupied dangling bond on each surface atom. These orbitals are weakly coupled, forming a nondegenerate, nonmetallic two-dimensional Mott insulator, a description involving very strong electron correlation effects. Strong experimental support for this Mott insulator description is provided by (i) the magnitude of Si(2p) core level shifts, (ii) the dispersion of the dangling bond energy bands, and (iii) the absolute ionization potential from the dangling bond levels.

Bibliography

Redondo, A., Goddard, W. A., & McGill, T. C. (1982). Mott insulator model of the Si(111)â(2Ã1) surface. Journal of Vacuum Science and Technology, 21(2), 649â654.

Authors 3

Antonio Redondo (first)
William A. Goddard (additional)
T. C. McGill (additional)

References 0 Referenced 47

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:33 a.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 6:46 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 2:32 a.m.)
Issued	43 years, 1 month ago (July 1, 1982)
Published	43 years, 1 month ago (July 1, 1982)
Published Print	43 years, 1 month ago (July 1, 1982)

Funders 0

None

BibTeX

@article{Redondo_1982, title={Mott insulator model of the Si(111)–(2×1) surface}, volume={21}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.571806}, DOI={10.1116/1.571806}, number={2}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Redondo, Antonio and Goddard, William A. and McGill, T. C.}, year={1982}, month=jul, pages={649–654} }

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