Abstract
X-ray standing wave measurements on single crystals of silicon are used to determine the coverage and position of chemisorbed bromine. Detailed analysis of the position information leads to the conclusion that silicon surface atoms bonded to adsorbed bromine atoms are in extrapolated bulk-line positions. Direct measurement of the desorption of correlated bromine in air demonstrates the high stability of the Br/Si surface interface.
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 27, 2002, 5:31 a.m.) |
Deposited | 2 years, 2 months ago (June 23, 2023, 11:33 a.m.) |
Indexed | 1 year, 7 months ago (Feb. 4, 2024, 11:42 a.m.) |
Issued | 43 years, 6 months ago (March 1, 1982) |
Published | 43 years, 6 months ago (March 1, 1982) |
Published Print | 43 years, 6 months ago (March 1, 1982) |
@article{Bedzyk_1982, title={X-ray standing wave analysis for bromine chemisorbed on silicon}, volume={20}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.571412}, DOI={10.1116/1.571412}, number={3}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Bedzyk, M. J. and Gibson, W. M. and Golovchenko, J. A.}, year={1982}, month=mar, pages={634–637} }