DOI: 10.1116/1.570945. Novel device structures by molecular beam epitaxy

Novel device structures by molecular beam epitaxy

10.1116/1.570945

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

This paper briefly reviews a few selected technologically important areas where Molecular Beam Epitaxy has been used to advantage. These include the use of MBE to study and improve ohmic and Schottky metallizations to GaAs and the invention of new types of variable barrier height diodes. The proven potential of MBE grown ternary alloy structures as materials for enhanced microwave and high speed digital devices and the use of selected area epitaxy for state of the art digital integrated circuit elements are also discussed.

Bibliography

Wood, C. E. C. (1981). Novel device structures by molecular beam epitaxy. Journal of Vacuum Science and Technology, 18(3), 772â777.

Authors 1

C. E. C. Wood (first)

References 0 Referenced 4

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:33 a.m.)
Deposited	2 years, 2 months ago (June 22, 2023, 4:23 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 12:35 p.m.)
Issued	44 years, 5 months ago (April 1, 1981)
Published	44 years, 5 months ago (April 1, 1981)
Published Print	44 years, 5 months ago (April 1, 1981)

Funders 0

None

BibTeX

@article{Wood_1981, title={Novel device structures by molecular beam epitaxy}, volume={18}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.570945}, DOI={10.1116/1.570945}, number={3}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Wood, C. E. C.}, year={1981}, month=apr, pages={772–777} }

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