DOI: 10.1116/1.570236. Abstract: Electronic structure of the (100) InAs

Abstract: Electronic structure of the (100) InAs–GaSb superlattice

10.1116/1.570236

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Bibliography

Ihm, J., Lam, P. K., & Cohen, M. L. (1979). Abstract: Electronic structure of the (100) InAsâGaSb superlattice. Journal of Vacuum Science and Technology, 16(5), 1512â1512.

Authors 3

J. Ihm (first)
Pui K. Lam (additional)
Marvin L. Cohen (additional)

References 0 Referenced 6

None

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:29 a.m.)
Deposited	2 years ago (July 27, 2023, 7:40 p.m.)
Indexed	2 years ago (July 27, 2023, 8:10 p.m.)
Issued	45 years, 11 months ago (Sept. 1, 1979)
Published	45 years, 11 months ago (Sept. 1, 1979)
Published Print	45 years, 11 months ago (Sept. 1, 1979)

Funders 0

None

BibTeX

@article{Ihm_1979, title={Abstract: Electronic structure of the (100) InAs–GaSb superlattice}, volume={16}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.570236}, DOI={10.1116/1.570236}, number={5}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Ihm, J. and Lam, Pui K. and Cohen, Marvin L.}, year={1979}, month=sep, pages={1512–1512} }

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