DOI: 10.1116/1.569746. (110) surface states of GaAs and matrix element effects in angle-resolved photoemission

(110) surface states of GaAs and matrix element effects in angle-resolved photoemission

10.1116/1.569746

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

The relaxed (110) surface electronic structure of GaAs is calculated within the tight-binding model. The symmetry and dispersion of the surface states are compared to those measured by angle-resolved photoemission experiments. Variations in photoemission intensity with measurement geometry are related to matrix-element modulation effects and it is shown that angle-resolved measurements can give information on the symmetry of surface states.

Bibliography

Chadi, D. J. (1978). (110) surface states of GaAs and matrix element effects in angle-resolved photoemission. Journal of Vacuum Science and Technology, 15(4), 1244â1248.

Authors 1

D. J. Chadi (first)

References 0 Referenced 42

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:31 a.m.)
Deposited	2 years, 1 month ago (July 25, 2023, 2:37 a.m.)
Indexed	2 years ago (Aug. 26, 2023, 6:19 a.m.)
Issued	47 years, 1 month ago (July 1, 1978)
Published	47 years, 1 month ago (July 1, 1978)
Published Print	47 years, 1 month ago (July 1, 1978)

Funders 0

None

BibTeX

@article{Chadi_1978, title={(110) surface states of GaAs and matrix element effects in angle-resolved photoemission}, volume={15}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.569746}, DOI={10.1116/1.569746}, number={4}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Chadi, D. J.}, year={1978}, month=jul, pages={1244–1248} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2023,
        8,
        26
      ]
    ],
    "date-time": "2023-08-26T10:19:46Z",
    "timestamp": 1693045186979
  },
  "reference-count": 0,
  "publisher": "American Vacuum Society",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1978,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The relaxed (110) surface electronic structure of GaAs is calculated within the tight-binding model. The symmetry and dispersion of the surface states are compared to those measured by angle-resolved photoemission experiments. Variations in photoemission intensity with measurement geometry are related to matrix-element modulation effects and it is shown that angle-resolved measurements can give information on the symmetry of surface states.</jats:p>",
  "DOI": "10.1116/1.569746",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        27
      ]
    ],
    "date-time": "2002-07-27T09:31:29Z",
    "timestamp": 1027762289000
  },
  "page": "1244-1248",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 42,
  "title": "(110) surface states of GaAs and matrix element effects in angle-resolved photoemission",
  "prefix": "10.1116",
  "volume": "15",
  "author": [
    {
      "given": "D. J.",
      "family": "Chadi",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Xerox, Palo Alto Research Center, Palo Alto, California 94304"
        }
      ]
    }
  ],
  "member": "20",
  "container-title": "Journal of Vacuum Science and Technology",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jvst/article-pdf/15/4/1244/11433435/1244_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jvst/article-pdf/15/4/1244/11433435/1244_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        25
      ]
    ],
    "date-time": "2023-07-25T06:37:00Z",
    "timestamp": 1690267020000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jvst/article/15/4/1244/782909/110-surface-states-of-GaAs-and-matrix-element"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1978,
        7,
        1
      ]
    ]
  },
  "references-count": 0,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          1978,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.569746",
  "relation": {},
  "ISSN": [
    "0022-5355"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1978,
        7
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1978,
        7,
        1
      ]
    ]
  }
}