Abstract
Techniques for the photolithographic fabrication of thin-film Josephson junctions are presented in detail, including metal liftoff processes, lead alloy composition, and formation of tunneling junction barriers using plasma oxidation in an rf discharge. A comparison with earlier rf plasma oxidation studies on Pb(In) –oxide–Pb junctions shows the tunneling resistance of Pb(In,Au) –oxide–Pb(Au) junctions to be nearly two decades lower for a given oxygen pressure in the rf discharge; this difference was attributed to the use of different alloys and sputtering parameter measurement techniques in the respective studies. Typically, tunneling resistance decreased by only 2% after ten thermal cycles, but decreased at an accelerated rate with subsequent cycling. Room-temperature storage often induced downward resistance changes on the order of 30% per month. Junctions stored at −15°C generally showed little change after a period of three months.
Dates
Type | When |
---|---|
Created | 23 years ago (July 27, 2002, 5:32 a.m.) |
Deposited | 2 years ago (July 29, 2023, 3:11 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 3:04 p.m.) |
Issued | 47 years, 5 months ago (March 1, 1978) |
Published | 47 years, 5 months ago (March 1, 1978) |
Published Print | 47 years, 5 months ago (March 1, 1978) |
@article{Havemann_1978, title={Photolithographic fabrication of lead alloy Josephson junctions}, volume={15}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.569555}, DOI={10.1116/1.569555}, number={2}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Havemann, R. H. and Hamilton, C. A. and Harris, Richard E.}, year={1978}, month=mar, pages={392–395} }