DOI: 10.1116/1.569413. Comparison of properties of dielectric films deposited by various methods

Comparison of properties of dielectric films deposited by various methods

10.1116/1.569413

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

In this review paper, the physico–chemical properties of various dielectric films used on semiconductor devices are compared according to their method of formation or deposition. The insulators which are discussed are silicon dioxide, phosphosilicate glass, silicon nitride, alumina, borosilicate glass, and other silicate glasses. The techniques of formation or deposition are thermal oxidation, CVD and pyrolytic deposition, plasma CVD, dc and rf reactive sputtering, rf sputtering, electron beam evaporation, and fused glass from sedimented powders.

Bibliography

Pliskin, W. A. (1977). Comparison of properties of dielectric films deposited by various methods. Journal of Vacuum Science and Technology, 14(5), 1064â1081.

Authors 1

W. A. Pliskin (first)

References 0 Referenced 441

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:33 a.m.)
Deposited	2 years, 1 month ago (July 7, 2023, 4:17 p.m.)
Indexed	3 weeks, 4 days ago (Aug. 2, 2025, 12:29 a.m.)
Issued	47 years, 11 months ago (Sept. 1, 1977)
Published	47 years, 11 months ago (Sept. 1, 1977)
Published Print	47 years, 11 months ago (Sept. 1, 1977)

Funders 0

None

BibTeX

@article{Pliskin_1977, title={Comparison of properties of dielectric films deposited by various methods}, volume={14}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.569413}, DOI={10.1116/1.569413}, number={5}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Pliskin, W. A.}, year={1977}, month=sep, pages={1064–1081} }

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