DOI: 10.1116/1.569400. Oxide barriers on GaAs by neutralized ion-beam sputtering

Oxide barriers on GaAs by neutralized ion-beam sputtering

10.1116/1.569400

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

Tantalum and silicon oxides have been sputter deposited onto gallium arsenide using a 500-eV beam of neutralized argon atoms. MIS devices show very low leakage and capacitances that can be varied from full accumulation to depletion with the application of modest voltages. Other measurements (breakdown field, dielectric constant, adherence, Auger profile, and photoluminescence) also suggest that these structures hold potential usefulness for insulated-gate GaAs circuitry.

Bibliography

Meiners, L. G., Pan, R.-P., & Sites, J. R. (1977). Oxide barriers on GaAs by neutralized ion-beam sputtering. Journal of Vacuum Science and Technology, 14(4), 961â963.

Authors 3

L. G. Meiners (first)
Ru-Pin Pan (additional)
J. R. Sites (additional)

References 0 Referenced 12

None

Dates

Type	When
Created	23 years, 1 month ago (July 27, 2002, 5:30 a.m.)
Deposited	2 years, 2 months ago (June 29, 2023, 12:33 a.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 7:23 a.m.)
Issued	48 years, 2 months ago (July 1, 1977)
Published	48 years, 2 months ago (July 1, 1977)
Published Print	48 years, 2 months ago (July 1, 1977)

Funders 0

None

BibTeX

@article{Meiners_1977, title={Oxide barriers on GaAs by neutralized ion-beam sputtering}, volume={14}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.569400}, DOI={10.1116/1.569400}, number={4}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Meiners, L. G. and Pan, Ru-Pin and Sites, J. R.}, year={1977}, month=jul, pages={961–963} }

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