DOI: 10.1116/1.568994. Hydrogen chemisorption on the silicon (110) 5×1 surface

Hydrogen chemisorption on the silicon (110) 5×1 surface

10.1116/1.568994

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science and Technology (20)

Abstract

We have established that chemisorption of atomic hydrogen on Si(110)5×1 surface forms two distinct 1×1 phases depending on temperature during H exposure. The high temperature phase is found to be the monohydride phase, Si(110):H. The room temperature phase has additional orbital intensity in its electronic density of states, which we interpret as due to hydrogen atoms chemisorbed weakly at nontetrahedral sites in the selvedge. Numerical estimates of the amounts of H involved have been made. The change of LEED pattern during H exposure suggests that the 5×1 superstructure is due to relaxation of surface Si atoms rather than due to surface vacancies.

Bibliography

Sakurai, T., & Hagstrum, H. D. (1976). Hydrogen chemisorption on the silicon (110) 5Ã1 surface. Journal of Vacuum Science and Technology, 13(4), 807â809.

Authors 2

Toshio Sakurai (first)
Homer D. Hagstrum (additional)

References 0 Referenced 43

None

Dates

Type	When
Created	23 years ago (July 27, 2002, 5:30 a.m.)
Deposited	2 years, 1 month ago (July 9, 2023, 1:14 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:01 p.m.)
Issued	49 years, 1 month ago (July 1, 1976)
Published	49 years, 1 month ago (July 1, 1976)
Published Print	49 years, 1 month ago (July 1, 1976)

Funders 0

None

BibTeX

@article{Sakurai_1976, title={Hydrogen chemisorption on the silicon (110) 5×1 surface}, volume={13}, ISSN={0022-5355}, url={http://dx.doi.org/10.1116/1.568994}, DOI={10.1116/1.568994}, number={4}, journal={Journal of Vacuum Science and Technology}, publisher={American Vacuum Society}, author={Sakurai, Toshio and Hagstrum, Homer D.}, year={1976}, month=jul, pages={807–809} }

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