DOI: 10.1116/1.4978021. Growth of ordered and disordered ZnSnN2

10.1116/1.4978021

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (20)

Abstract

A series of ZnSnN2 films has been grown by plasma assisted molecular beam epitaxy in order to investigate the possibility of controlled cation sublattice disorder as well as its effects on physical and electronic properties of the material. By varying the growth conditions, specifically either the metal to nitrogen flux ratio or the substrate temperature, the authors have confirmed the existence of both the hexagonal and orthorhombic phases of the material via synchrotron x-ray diffraction and in situ reflection high energy electron diffraction measurements. Here, the authors report the results of an initial mapping and analysis of the growth parameter space, as part of continuing efforts to improve material quality.

Bibliography

Makin, R. A., Senabulya, N., Mathis, J., Feldberg, N., Miska, P., Clarke, R., & Durbin, S. M. (2017). Growth of ordered and disordered ZnSnN2. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 35(2).

Authors 7

Robert Allen Makin (first)
Nancy Senabulya (additional)
James Mathis (additional)
N. Feldberg (additional)
P. Miska (additional)
Roy Clarke (additional)
Steven M. Durbin (additional)

References 27 Referenced 10

10.1016/S0031-8914(54)80247-3 / Physica (1954)
10.1149/1.2430171 / J. Electrochem. Soc. (1956)
10.1038/179828b0 / Nature (1957)
10.1103/PhysRevB.27.5176 / Phys. Rev. B (1983)
10.1103/PhysRevB.45.2533 / Phys. Rev. B (1992)
10.1063/1.4730375 / Appl. Phys. Lett. (2012)
10.1063/1.3442917 / Appl. Phys. Lett. (2010)
10.1557/JMR.1987.0528 / J. Mater. Res. (1987)
10.1103/PhysRevB.84.165204 / Phys. Rev. B (2011)
10.1063/1.4816438 / Appl. Phys. Lett. (2013)
10.1002/adma.201204718 / Adv. Mater. (2013)
10.1103/PhysRevLett.65.353 / Phys. Rev. Lett. (1990)
10.1002/aelm.201600544 / Adv. Electronic Mater. (2017)
10.1103/PhysRevB.72.155202 / Phys. Rev. B (2005)
10.1103/PhysRevB.76.115205 / Phys. Rev. B (2007)
10.1103/PhysRevB.77.235213 / Phys. Rev. B (2008)
10.1103/PhysRevB.79.245205 / Phys. Rev. B (2009)
{'key': '2023062114483664800_c18', 'article-title': 'Mineral commodity summaries 2016'} / Mineral commodity summaries 2016
10.1039/C5TC02663F / J. Mater. Chem. C (2015)
10.1063/1.4945728 / Appl. Phys. Lett. (2016)
10.1557/mrc.2013.19 / MRS Commun. (2013)
10.1002/crat.201500258 / Crystal Res. Technol. (2016)
10.1002/aenm.201501462 / Adv. Energy Mater. (2015)
10.1063/1.4960109 / AIP Adv. (2016)
10.1016/j.jcrysgro.2005.01.013 / J. Cryst. Growth (2005)
10.1063/1.2718884 / J. Appl. Phys. (2007)
10.1107/S0021889811038970 / J. Appl. Crystallogr. (2011)

Dates

Type	When
Created	8 years, 5 months ago (March 27, 2017, 7:49 a.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 12:23 p.m.)
Indexed	1 month, 1 week ago (July 30, 2025, 8:48 a.m.)
Issued	8 years, 6 months ago (March 1, 2017)
Published	8 years, 6 months ago (March 1, 2017)
Published Online	8 years, 5 months ago (March 21, 2017)
Published Print	8 years, 6 months ago (March 1, 2017)

Funders 1

National Science Foundation 10.13039/100000001
Region: Americas
gov (National government)
Labels4
1. U.S. National Science Foundation
2. NSF
3. US NSF
4. USA NSF
Awards2
1. DMR-1410915
2. DMR-10006835

BibTeX

@article{Makin_2017, title={Growth of ordered and disordered ZnSnN2}, volume={35}, ISSN={2166-2754}, url={http://dx.doi.org/10.1116/1.4978021}, DOI={10.1116/1.4978021}, number={2}, journal={Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Makin, Robert Allen and Senabulya, Nancy and Mathis, James and Feldberg, N. and Miska, P. and Clarke, Roy and Durbin, Steven M.}, year={2017}, month=mar }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T12:48:49Z",
    "timestamp": 1753879729394,
    "version": "3.41.2"
  },
  "reference-count": 27,
  "publisher": "American Vacuum Society",
  "issue": "2",
  "funder": [
    {
      "DOI": "10.13039/100000001",
      "name": "National Science Foundation",
      "doi-asserted-by": "publisher",
      "award": [
        "DMR-10006835",
        "DMR-1410915"
      ],
      "id": [
        {
          "id": "10.13039/100000001",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    }
  ],
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2017,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p>A series of ZnSnN2 films has been grown by plasma assisted molecular beam epitaxy in order to investigate the possibility of controlled cation sublattice disorder as well as its effects on physical and electronic properties of the material. By varying the growth conditions, specifically either the metal to nitrogen flux ratio or the substrate temperature, the authors have confirmed the existence of both the hexagonal and orthorhombic phases of the material via synchrotron x-ray diffraction and in situ reflection high energy electron diffraction measurements. Here, the authors report the results of an initial mapping and analysis of the growth parameter space, as part of continuing efforts to improve material quality.</jats:p>",
  "DOI": "10.1116/1.4978021",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2017,
        3,
        27
      ]
    ],
    "date-time": "2017-03-27T11:49:11Z",
    "timestamp": 1490615351000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 10,
  "title": "Growth of ordered and disordered ZnSnN2",
  "prefix": "10.1116",
  "volume": "35",
  "author": [
    {
      "given": "Robert Allen",
      "family": "Makin",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Western Michigan University Department of Electrical and Computer Engineering, , Kalamazoo, Michigan 49008-5329"
        }
      ]
    },
    {
      "given": "Nancy",
      "family": "Senabulya",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Michigan Department of Physics, , Ann Arbor, Michigan 48109"
        }
      ]
    },
    {
      "given": "James",
      "family": "Mathis",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Michigan Department of Physics, , Ann Arbor, Michigan 48109"
        }
      ]
    },
    {
      "given": "N.",
      "family": "Feldberg",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universit\u00e9 de Lorraine Institut Jean Lamour, , CNRS UMR 7198, Nancy F-54506, France"
        }
      ]
    },
    {
      "given": "P.",
      "family": "Miska",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universit\u00e9 de Lorraine Institut Jean Lamour, , CNRS UMR 7198, Nancy F-54506, France"
        }
      ]
    },
    {
      "given": "Roy",
      "family": "Clarke",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Michigan Department of Physics, , Ann Arbor, Michigan 48109"
        }
      ]
    },
    {
      "given": "Steven M.",
      "family": "Durbin",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Western Michigan University Department of Electrical and Computer Engineering, , Kalamazoo, Michigan 49008-5329"
        }
      ]
    }
  ],
  "member": "20",
  "published-online": {
    "date-parts": [
      [
        2017,
        3,
        21
      ]
    ]
  },
  "reference": [
    {
      "key": "2023062114483664800_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1107",
      "DOI": "10.1016/S0031-8914(54)80247-3",
      "volume": "20",
      "year": "1954",
      "journal-title": "Physica"
    },
    {
      "key": "2023062114483664800_c2",
      "doi-asserted-by": "publisher",
      "first-page": "609",
      "DOI": "10.1149/1.2430171",
      "volume": "103",
      "year": "1956",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062114483664800_c3",
      "doi-asserted-by": "publisher",
      "first-page": "828",
      "DOI": "10.1038/179828b0",
      "volume": "179",
      "year": "1957",
      "journal-title": "Nature"
    },
    {
      "key": "2023062114483664800_c4",
      "doi-asserted-by": "publisher",
      "first-page": "5176",
      "DOI": "10.1103/PhysRevB.27.5176",
      "volume": "27",
      "year": "1983",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062114483664800_c5",
      "doi-asserted-by": "publisher",
      "first-page": "2533",
      "DOI": "10.1103/PhysRevB.45.2533",
      "volume": "45",
      "year": "1992",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062114483664800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "251911",
      "DOI": "10.1063/1.4730375",
      "volume": "100",
      "year": "2012",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062114483664800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "231913",
      "DOI": "10.1063/1.3442917",
      "volume": "96",
      "year": "2010",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062114483664800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "528",
      "DOI": "10.1557/JMR.1987.0528",
      "volume": "2",
      "year": "1987",
      "journal-title": "J. Mater. Res."
    },
    {
      "key": "2023062114483664800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "165204",
      "DOI": "10.1103/PhysRevB.84.165204",
      "volume": "84",
      "year": "2011",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062114483664800_c10",
      "doi-asserted-by": "publisher",
      "first-page": "042109",
      "DOI": "10.1063/1.4816438",
      "volume": "103",
      "year": "2013",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062114483664800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "2562",
      "DOI": "10.1002/adma.201204718",
      "volume": "25",
      "year": "2013",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2023062114483664800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "353",
      "DOI": "10.1103/PhysRevLett.65.353",
      "volume": "65",
      "year": "1990",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023062114483664800_c13",
      "doi-asserted-by": "publisher",
      "first-page": "1600544",
      "DOI": "10.1002/aelm.201600544",
      "volume": "3",
      "year": "2017",
      "journal-title": "Adv. Electronic Mater."
    },
    {
      "key": "2023062114483664800_c14",
      "doi-asserted-by": "publisher",
      "first-page": "155202",
      "DOI": "10.1103/PhysRevB.72.155202",
      "volume": "72",
      "year": "2005",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062114483664800_c15",
      "doi-asserted-by": "publisher",
      "first-page": "115205",
      "DOI": "10.1103/PhysRevB.76.115205",
      "volume": "76",
      "year": "2007",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062114483664800_c16",
      "doi-asserted-by": "publisher",
      "first-page": "235213",
      "DOI": "10.1103/PhysRevB.77.235213",
      "volume": "77",
      "year": "2008",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062114483664800_c17",
      "doi-asserted-by": "publisher",
      "first-page": "245205",
      "DOI": "10.1103/PhysRevB.79.245205",
      "volume": "79",
      "year": "2009",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062114483664800_c18",
      "article-title": "Mineral commodity summaries 2016"
    },
    {
      "key": "2023062114483664800_c19",
      "doi-asserted-by": "publisher",
      "first-page": "11017",
      "DOI": "10.1039/C5TC02663F",
      "volume": "3",
      "year": "2015",
      "journal-title": "J. Mater. Chem. C"
    },
    {
      "key": "2023062114483664800_c20",
      "doi-asserted-by": "publisher",
      "first-page": "142104",
      "DOI": "10.1063/1.4945728",
      "volume": "108",
      "year": "2016",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062114483664800_c21",
      "doi-asserted-by": "publisher",
      "first-page": "135",
      "DOI": "10.1557/mrc.2013.19",
      "volume": "3",
      "year": "2013",
      "journal-title": "MRS Commun."
    },
    {
      "key": "2023062114483664800_c22",
      "doi-asserted-by": "publisher",
      "first-page": "220",
      "DOI": "10.1002/crat.201500258",
      "volume": "51",
      "year": "2016",
      "journal-title": "Crystal Res. Technol."
    },
    {
      "key": "2023062114483664800_c23",
      "doi-asserted-by": "publisher",
      "first-page": "1501462",
      "DOI": "10.1002/aenm.201501462",
      "volume": "5",
      "year": "2015",
      "journal-title": "Adv. Energy Mater."
    },
    {
      "key": "2023062114483664800_c24",
      "doi-asserted-by": "publisher",
      "first-page": "075019",
      "DOI": "10.1063/1.4960109",
      "volume": "6",
      "year": "2016",
      "journal-title": "AIP Adv."
    },
    {
      "key": "2023062114483664800_c25",
      "doi-asserted-by": "publisher",
      "first-page": "426",
      "DOI": "10.1016/j.jcrysgro.2005.01.013",
      "volume": "278",
      "year": "2005",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023062114483664800_c26",
      "doi-asserted-by": "publisher",
      "first-page": "083516",
      "DOI": "10.1063/1.2718884",
      "volume": "101",
      "year": "2007",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023062114483664800_c27",
      "doi-asserted-by": "publisher",
      "first-page": "1272",
      "DOI": "10.1107/S0021889811038970",
      "volume": "44",
      "year": "2011",
      "journal-title": "J. Appl. Crystallogr."
    }
  ],
  "container-title": "Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/1.4978021/16107547/02b116_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "http://avs.scitation.org/doi/am-pdf/10.1116/1.4978021",
      "content-type": "application/pdf",
      "content-version": "am",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/1.4978021/16107547/02b116_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        23
      ]
    ],
    "date-time": "2023-06-23T16:23:48Z",
    "timestamp": 1687537428000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jvb/article/35/2/02B116/102599/Growth-of-ordered-and-disordered-ZnSnN2"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2017,
        3,
        1
      ]
    ]
  },
  "references-count": 27,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          2017,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.4978021",
  "relation": {},
  "ISSN": [
    "2166-2746",
    "2166-2754"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2017,
        3
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2017,
        3,
        1
      ]
    ]
  },
  "article-number": "02B116"
}