DOI: 10.1116/1.3622619. Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films

Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films

10.1116/1.3622619

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

Sputter-deposited W films with nominal thicknesses between 5 and 180 nm were prepared by varying the base pressure prior to film deposition and by including or not including sputtered SiO2 encapsulation layers. X-ray and electron diffraction studies showed that single phase, polycrystalline α-W could be achieved in as-deposited films as thin as 5 nm. The stress state in the as-deposited films was found to be inhomogeneous. Annealing resulted in stress relaxation and reduction of resistivity for all films, except the thinnest, unencapsulated film, which agglomerated. In-plane film grain sizes measured for a subset of the annealed films with thicknesses between 5 and 180 nm surprisingly showed a near constant value (101–116 nm), independent of film thickness. Thick-film (≥120 nm) resistivity values as low as 8.6 μΩ cm at 301 K were obtained after annealing at 850 °C for 2 h. Film resistivities were found to increase with decreasing film thicknesses below 120 nm, even for films which are fully A2 α-W with no metastable, A15 β-W evident.

Bibliography

Choi, D., Wang, B., Chung, S., Liu, X., Darbal, A., Wise, A., Nuhfer, N. T., Barmak, K., Warren, A. P., Coffey, K. R., & Toney, M. F. (2011). Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29(5).

Authors 11

Dooho Choi (first)
Bincheng Wang (additional)
Suk Chung (additional)
Xuan Liu (additional)
Amith Darbal (additional)
Adam Wise (additional)
Noel T. Nuhfer (additional)
Katayun Barmak (additional)
Andrew P. Warren (additional)
Kevin R. Coffey (additional)
Michael F. Toney (additional)

References 46 Referenced 101

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Dates

Type	When
Created	14 years ago (Aug. 15, 2011, 6:18 p.m.)
Deposited	2 years, 1 month ago (June 28, 2023, 11:31 p.m.)
Indexed	2 days, 15 hours ago (Aug. 21, 2025, 2 p.m.)
Issued	14 years ago (Aug. 15, 2011)
Published	14 years ago (Aug. 15, 2011)
Published Online	14 years ago (Aug. 15, 2011)
Published Print	13 years, 11 months ago (Sept. 1, 2011)

Funders 0

None

BibTeX

@article{Choi_2011, title={Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films}, volume={29}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.3622619}, DOI={10.1116/1.3622619}, number={5}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Choi, Dooho and Wang, Bincheng and Chung, Suk and Liu, Xuan and Darbal, Amith and Wise, Adam and Nuhfer, Noel T. and Barmak, Katayun and Warren, Andrew P. and Coffey, Kevin R. and Toney, Michael F.}, year={2011}, month=aug }

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