DOI: 10.1116/1.3554691. Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

10.1116/1.3554691

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of ∼1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of ∼16 μΩ cm. The O2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.

Bibliography

Leick, N., Verkuijlen, R. O. F., Lamagna, L., Langereis, E., Rushworth, S., Roozeboom, F., van de Sanden, M. C. M., & Kessels, W. M. M. (2011). Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29(2).

Authors 8

N. Leick (first)
R. O. F. Verkuijlen (additional)
L. Lamagna (additional)
E. Langereis (additional)
S. Rushworth (additional)
F. Roozeboom (additional)
M. C. M. van de Sanden (additional)
W. M. M. Kessels (additional)

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Dates

Type	When
Created	14 years, 6 months ago (Feb. 16, 2011, 6:01 p.m.)
Deposited	2 years, 2 months ago (June 28, 2023, 10:54 p.m.)
Indexed	1 month ago (July 30, 2025, 9:10 a.m.)
Issued	14 years, 6 months ago (Feb. 16, 2011)
Published	14 years, 6 months ago (Feb. 16, 2011)
Published Online	14 years, 6 months ago (Feb. 16, 2011)
Published Print	14 years, 6 months ago (March 1, 2011)

Funders 0

None

BibTeX

@article{Leick_2011, title={Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma}, volume={29}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.3554691}, DOI={10.1116/1.3554691}, number={2}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Leick, N. and Verkuijlen, R. O. F. and Lamagna, L. and Langereis, E. and Rushworth, S. and Roozeboom, F. and van de Sanden, M. C. M. and Kessels, W. M. M.}, year={2011}, month=feb }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T13:10:53Z",
    "timestamp": 1753881053127,
    "version": "3.41.2"
  },
  "reference-count": 47,
  "publisher": "American Vacuum Society",
  "issue": "2",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2011,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The metalorganic precursor cyclopentadienylethyl(dicarbonyl)ruthenium (CpRu(CO)2Et) was used to develop an atomic layer deposition (ALD) process for ruthenium. O2 gas and O2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of \u223c1\u2002\u00c5 was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of \u223c16\u2002\u03bc\u03a9\u2009cm. The O2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.</jats:p>",
  "DOI": "10.1116/1.3554691",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        2,
        16
      ]
    ],
    "date-time": "2011-02-16T23:01:41Z",
    "timestamp": 1297897301000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 52,
  "title": "Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma",
  "prefix": "10.1116",
  "volume": "29",
  "author": [
    {
      "given": "N.",
      "family": "Leick",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"
        }
      ]
    },
    {
      "given": "R. O. F.",
      "family": "Verkuijlen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"
        }
      ]
    },
    {
      "given": "L.",
      "family": "Lamagna",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IMM-CNR Laboratorio MDM, , Via C. Olivetti, 2, 20041 Agrate Brianza (MB), Italy"
        }
      ]
    },
    {
      "given": "E.",
      "family": "Langereis",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"
        }
      ]
    },
    {
      "given": "S.",
      "family": "Rushworth",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "SAFC Hitech Limited Power Road , Bromborough, Wirral CH62 3QF, United Kingdom"
        }
      ]
    },
    {
      "given": "F.",
      "family": "Roozeboom",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , High Tech Campus 4, 5656 AE Eindhoven, The Netherlands"
        },
        {
          "name": "NXP-TSMC Research Center , P.O. Box 513, 5600 MB Eindhoven, The Netherlands and , High Tech Campus 4, 5656 AE Eindhoven, The Netherlands"
        }
      ]
    },
    {
      "given": "M. C. M.",
      "family": "van de Sanden",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"
        }
      ]
    },
    {
      "given": "W. M. M.",
      "family": "Kessels",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"
        }
      ]
    }
  ],
  "member": "20",
  "published-online": {
    "date-parts": [
      [
        2011,
        2,
        16
      ]
    ]
  },
  "reference": [
    {
      "author": "ITRS",
      "key": "2023062902544391700_c1"
    },
    {
      "key": "2023062902544391700_c2",
      "doi-asserted-by": "publisher",
      "first-page": "1789",
      "DOI": "10.1016/j.mee.2009.03.045",
      "volume": "86",
      "year": "2009",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "2023062902544391700_c3",
      "doi-asserted-by": "publisher",
      "first-page": "209",
      "DOI": "10.1116/1.3025855",
      "volume": "27",
      "year": "2009",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023062902544391700_c4",
      "doi-asserted-by": "publisher",
      "first-page": "G1",
      "DOI": "10.1149/1.3244213",
      "volume": "157",
      "year": "2010",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062902544391700_c5",
      "doi-asserted-by": "publisher",
      "first-page": "C15",
      "DOI": "10.1149/1.1827595",
      "volume": "152",
      "year": "2005",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062902544391700_c6",
      "doi-asserted-by": "publisher",
      "first-page": "C9",
      "DOI": "10.1149/1.1340916",
      "volume": "4",
      "year": "2001",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023062902544391700_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1774",
      "DOI": "10.1016/j.mee.2009.03.001",
      "volume": "86",
      "year": "2009",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "2023062902544391700_c8",
      "doi-asserted-by": "publisher",
      "first-page": "6934",
      "DOI": "10.1143/JJAP.37.6934",
      "volume": "37",
      "year": "1998",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2023062902544391700_c9"
    },
    {
      "key": "2023062902544391700_c10",
      "doi-asserted-by": "publisher",
      "first-page": "094101",
      "DOI": "10.1063/1.3246835",
      "volume": "106",
      "year": "2009",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023062902544391700_c11",
      "doi-asserted-by": "publisher",
      "first-page": "215",
      "DOI": "10.1002/cvde.200306288",
      "volume": "10",
      "year": "2004",
      "journal-title": "Chem. Vap. Deposition"
    },
    {
      "key": "2023062902544391700_c12",
      "doi-asserted-by": "publisher",
      "first-page": "3353",
      "DOI": "10.1557/JMR.2004.0426",
      "volume": "19",
      "year": "2004",
      "journal-title": "J. Mater. Res."
    },
    {
      "key": "2023062902544391700_c13",
      "doi-asserted-by": "publisher",
      "first-page": "9003",
      "DOI": "10.1016/j.surfcoat.2007.04.129",
      "volume": "201",
      "year": "2007",
      "journal-title": "Surf. Coat. Technol."
    },
    {
      "key": "2023062902544391700_c14",
      "doi-asserted-by": "publisher",
      "first-page": "45",
      "DOI": "10.1002/cvde.200290007",
      "volume": "9",
      "year": "2003",
      "journal-title": "Chem. Vap. Deposition"
    },
    {
      "key": "2023062902544391700_c15",
      "doi-asserted-by": "publisher",
      "first-page": "051903",
      "DOI": "10.1063/1.1852079",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062902544391700_c16",
      "doi-asserted-by": "publisher",
      "first-page": "7345",
      "DOI": "10.1016/j.tsf.2008.02.011",
      "volume": "516",
      "year": "2008",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023062902544391700_c17",
      "doi-asserted-by": "publisher",
      "first-page": "39",
      "DOI": "10.1016/j.mee.2007.01.239",
      "volume": "85",
      "year": "2008",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "2023062902544391700_c18",
      "doi-asserted-by": "publisher",
      "first-page": "H773",
      "DOI": "10.1149/1.2750448",
      "volume": "154",
      "year": "2007",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062902544391700_c19",
      "doi-asserted-by": "publisher",
      "first-page": "093115",
      "DOI": "10.1063/1.2338793",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062902544391700_c20",
      "doi-asserted-by": "publisher",
      "first-page": "C130",
      "DOI": "10.1149/1.1595312",
      "volume": "6",
      "year": "2003",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023062902544391700_c21",
      "doi-asserted-by": "publisher",
      "first-page": "D95",
      "DOI": "10.1149/1.2403081",
      "volume": "154",
      "year": "2007",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062902544391700_c22",
      "doi-asserted-by": "publisher",
      "first-page": "11329",
      "DOI": "10.1021/jp9021882",
      "volume": "113",
      "year": "2009",
      "journal-title": "J. Phys. Chem. C"
    },
    {
      "key": "2023062902544391700_c23",
      "doi-asserted-by": "publisher",
      "first-page": "6852",
      "DOI": "10.1143/JJAP.41.6852",
      "volume": "41",
      "year": "2002",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2023062902544391700_c24",
      "doi-asserted-by": "publisher",
      "first-page": "C46",
      "DOI": "10.1149/1.1648612",
      "volume": "7",
      "year": "2004",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023062902544391700_c25",
      "doi-asserted-by": "publisher",
      "first-page": "5252",
      "DOI": "10.1016/j.apsusc.2008.07.159",
      "volume": "255",
      "year": "2009",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023062902544391700_c26",
      "doi-asserted-by": "publisher",
      "first-page": "145202",
      "DOI": "10.1088/0022-3727/42/14/145202",
      "volume": "42",
      "year": "2009",
      "journal-title": "J. Phys. D: Appl. Phys."
    },
    {
      "key": "2023062902544391700_c27",
      "doi-asserted-by": "publisher",
      "first-page": "86",
      "DOI": "10.1016/j.matchemphys.2008.11.024",
      "volume": "115",
      "year": "2009",
      "journal-title": "Mater. Chem. Phys."
    },
    {
      "key": "2023062902544391700_c28",
      "doi-asserted-by": "publisher",
      "first-page": "78",
      "DOI": "10.1016/S0169-4332(01)00373-7",
      "volume": "181",
      "year": "2001",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023062902544391700_c29",
      "doi-asserted-by": "publisher",
      "first-page": "2248",
      "DOI": "10.1016/j.mee.2006.10.013",
      "volume": "83",
      "year": "2006",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "2023062902544391700_c30",
      "doi-asserted-by": "publisher",
      "first-page": "D85",
      "DOI": "10.1149/1.3207867",
      "volume": "12",
      "year": "2009",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023062902544391700_c31",
      "doi-asserted-by": "publisher",
      "first-page": "D35",
      "DOI": "10.1149/1.3251285",
      "volume": "157",
      "year": "2010",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062902544391700_c32",
      "doi-asserted-by": "publisher",
      "first-page": "53",
      "DOI": "10.1002/cvde.200806737",
      "volume": "15",
      "year": "2009",
      "journal-title": "Chem. Vap. Deposition"
    },
    {
      "key": "2023062902544391700_c33",
      "doi-asserted-by": "publisher",
      "first-page": "4867",
      "DOI": "10.1021/cm903793u",
      "volume": "22",
      "year": "2010",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2023062902544391700_c34",
      "doi-asserted-by": "publisher",
      "first-page": "G34",
      "DOI": "10.1149/1.3125876",
      "volume": "12",
      "year": "2009",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023062902544391700_c35",
      "doi-asserted-by": "publisher",
      "first-page": "G165",
      "DOI": "10.1149/1.2737629",
      "volume": "154",
      "year": "2007",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062902544391700_c36",
      "doi-asserted-by": "publisher",
      "first-page": "G287",
      "DOI": "10.1149/1.2988651",
      "volume": "155",
      "year": "2008",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062902544391700_c37",
      "doi-asserted-by": "publisher",
      "first-page": "G176",
      "DOI": "10.1149/1.1928227",
      "volume": "8",
      "year": "2005",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023062902544391700_c38"
    },
    {
      "key": "2023062902544391700_c39",
      "doi-asserted-by": "publisher",
      "first-page": "117",
      "DOI": "10.1016/j.mseb.2003.10.061",
      "volume": "109",
      "year": "2004",
      "journal-title": "Mater. Sci. Eng., B"
    },
    {
      "key": "2023062902544391700_c40",
      "doi-asserted-by": "publisher",
      "first-page": "2025",
      "DOI": "10.1016/j.jcrysgro.2010.03.033",
      "volume": "312",
      "year": "2010",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023062902544391700_c41",
      "doi-asserted-by": "publisher",
      "first-page": "111",
      "DOI": "10.1021/cr900056b",
      "volume": "110",
      "year": "2010",
      "journal-title": "Chem. Rev."
    },
    {
      "key": "2023062902544391700_c42",
      "doi-asserted-by": "publisher",
      "first-page": "7686",
      "DOI": "10.1063/1.1810193",
      "volume": "96",
      "year": "2004",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023062902544391700_c43",
      "doi-asserted-by": "publisher",
      "first-page": "846",
      "DOI": "10.1134/1.1259082",
      "volume": "43",
      "year": "1998",
      "journal-title": "Tech. Phys."
    },
    {
      "key": "2023062902544391700_c44",
      "doi-asserted-by": "publisher",
      "first-page": "1966",
      "DOI": "10.1063/1.480756",
      "volume": "112",
      "year": "2000",
      "journal-title": "J. Chem. Phys."
    },
    {
      "key": "2023062902544391700_c45",
      "doi-asserted-by": "publisher",
      "first-page": "103511",
      "DOI": "10.1063/1.1894584",
      "volume": "97",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023062902544391700_c46",
      "doi-asserted-by": "publisher",
      "first-page": "5355",
      "DOI": "10.1016/j.tsf.2010.04.064",
      "volume": "518",
      "year": "2010",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023062902544391700_c47"
    }
  ],
  "container-title": "Journal of Vacuum Science &amp; Technology A: Vacuum, Surfaces, and Films",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/1.3554691/15859989/021016_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/1.3554691/15859989/021016_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        29
      ]
    ],
    "date-time": "2023-06-29T02:54:51Z",
    "timestamp": 1688007291000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jva/article/29/2/021016/244096/Atomic-layer-deposition-of-Ru-from-CpRu-CO-2Et"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2011,
        2,
        16
      ]
    ]
  },
  "references-count": 47,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          2011,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.3554691",
  "relation": {},
  "ISSN": [
    "0734-2101",
    "1520-8559"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2011,
        3
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2011,
        2,
        16
      ]
    ]
  },
  "article-number": "021016"
}