DOI: 10.1116/1.3536487. Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition

10.1116/1.3536487

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (20)

Bibliography

KÃ¼geler, C., Zhang, J., Hoffmann-Eifert, S., Kim, S. K., & Waser, R. (2011). Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 29(1), 01AD01.

Authors 5

C. Kügeler (first)
J. Zhang (additional)
S. Hoffmann-Eifert (additional)
S. K. Kim (additional)
R. Waser (additional)

References 25 Referenced 21

10.1063/1.126902
10.1002/adma.200900375
10.1063/1.2210087
{'key': 'c4', 'series-title': 'Electron Devices Meeting', 'first-page': '767', 'author': 'Tsunoda K.', 'year': '2007'} / Electron Devices Meeting by Tsunoda K. (2007)
10.1016/j.tsf.2009.10.040
{'key': 'c6', 'series-title': 'Proceedings of the Non Volatile Memory Technology Symposium', 'first-page': '82', 'author': 'Schindler C.', 'year': '2007'} / Proceedings of the Non Volatile Memory Technology Symposium by Schindler C. (2007)
10.1109/TNANO.2006.880407
10.1063/1.3077310
10.1007/10828028_1
10.1038/nmat1614
{'key': 'c11', 'first-page': '1', 'volume': '89', 'author': 'Jeong D. S.', 'year': '2006', 'journal-title': 'Appl. Phys. Lett.', 'ISSN': 'http://id.crossref.org/issn/0003-6951', 'issn-type': 'print'} / Appl. Phys. Lett. by Jeong D. S. (2006)
10.1088/0957-4484/16/6/045
{'key': 'c13', 'first-page': '1', 'volume': '18', 'author': 'Snider G. S.', 'year': '2007', 'journal-title': 'Nanotechnology', 'ISSN': 'http://id.crossref.org/issn/0957-4484', 'issn-type': 'print'} / Nanotechnology by Snider G. S. (2007)
10.1038/nature05462
10.1016/j.sse.2009.09.034
10.1038/nmat2748
10.1016/j.mee.2008.01.101
10.1149/1.3507258
{'key': 'c19', 'series-title': 'Proceedings of the 10th International Conference on Ultimate Integration on Silicon', 'first-page': '135', 'author': 'Nauenheim C.', 'year': '2009'} / Proceedings of the 10th International Conference on Ultimate Integration on Silicon by Nauenheim C. (2009)
10.1016/S0920-2307(89)80006-4
10.1002/anie.200301652
10.1063/1.1940727
10.1149/1.2081994
10.1149/1.3138722
10.1063/1.3367752

Dates

Type	When
Created	14 years, 7 months ago (Jan. 14, 2011, 6:10 p.m.)
Deposited	2 years, 4 months ago (April 20, 2023, 7:47 p.m.)
Indexed	1 year ago (Aug. 21, 2024, 10:50 p.m.)
Issued	14 years, 7 months ago (Jan. 1, 2011)
Published	14 years, 7 months ago (Jan. 1, 2011)
Published Print	14 years, 7 months ago (Jan. 1, 2011)

Funders 0

None

BibTeX

@article{K_geler_2011, title={Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition}, volume={29}, ISSN={2166-2754}, url={http://dx.doi.org/10.1116/1.3536487}, DOI={10.1116/1.3536487}, number={1}, journal={Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Kügeler, C. and Zhang, J. and Hoffmann-Eifert, S. and Kim, S. K. and Waser, R.}, year={2011}, month=jan, pages={01AD01} }

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