DOI: 10.1116/1.3225588. Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants

10.1116/1.3225588

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena (20)

Abstract

This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs+ and O2+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution Rutherford backscattering spectroscopy and elastic recoil detection analysis profiles. The overall results confirm that the use of EXLIE conditions minimizes near surface (depth &lt;5 nm) artifacts but data quantification still requires dedicated postanalysis data treatment to take into account matrix effects between Si and SiO2.

Bibliography

Merkulov, A., Peres, P., Choi, S., Horreard, F., Ehrke, H.-U., Loibl, N., & Schuhmacher, M. (2010). Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 28(1), C1C48-C1C53.

Authors 7

A. Merkulov (first)
P. Peres (additional)
S. Choi (additional)
F. Horreard (additional)
H.-U. Ehrke (additional)
N. Loibl (additional)
M. Schuhmacher (additional)

References 6 Referenced 15

{'key': '2023070921405646400_c1', 'first-page': '805', 'volume-title': 'Appl. Surf. Sci.', 'year': '2007'} / Appl. Surf. Sci. (2007)
{'key': '2023070921405646400_c2', 'first-page': '533', 'year': '1999'} (1999)
{'key': '2023070921405646400_c3', 'first-page': '1606', 'volume-title': 'Appl. Surf. Sci.', 'year': '2007'} / Appl. Surf. Sci. (2007)
10.1016/j.apsusc.2004.03.130 / Appl. Surf. Sci. (2004)
10.1002/sia.2597 / Surf. Interface Anal. (2007)
{'key': '2023070921405646400_c6', 'first-page': '7215', 'volume-title': 'Appl. Surf. Sci.', 'year': '2005'} / Appl. Surf. Sci. (2005)

Dates

Type	When
Created	15 years, 5 months ago (March 1, 2010, 6 p.m.)
Deposited	2 years, 1 month ago (July 9, 2023, 5:41 p.m.)
Indexed	1 year, 10 months ago (Oct. 8, 2023, 3:16 p.m.)
Issued	15 years, 7 months ago (Jan. 1, 2010)
Published	15 years, 7 months ago (Jan. 1, 2010)
Published Online	15 years, 5 months ago (March 1, 2010)
Published Print	15 years, 7 months ago (Jan. 1, 2010)

Funders 0

None

BibTeX

@article{Merkulov_2010, title={Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants}, volume={28}, ISSN={2166-2754}, url={http://dx.doi.org/10.1116/1.3225588}, DOI={10.1116/1.3225588}, number={1}, journal={Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Merkulov, A. and Peres, P. and Choi, S. and Horreard, F. and Ehrke, H.-U. and Loibl, N. and Schuhmacher, M.}, year={2010}, month=jan, pages={C1C48-C1C53} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2023,
        10,
        8
      ]
    ],
    "date-time": "2023-10-08T19:16:02Z",
    "timestamp": 1696792562086
  },
  "reference-count": 6,
  "publisher": "American Vacuum Society",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2010,
        1,
        1
      ]
    ]
  },
  "abstract": "<jats:p>This article presents investigation on secondary ion mass spectroscopy (SIMS) profile quantification for ultrashallow profiles. New configuration for the cesium and oxygen sources on the CAMECA IMS Wf tool-provides SIMS profiling capability at 150 eV impact energy with sputter rates of 1 and 2 nm/min for the Cs+ and O2+ primary beams, respectively. Results for as-implanted B, P, and As profiles using extremely low impact energy (EXLIE) sputtering conditions are reported. They are compared with high resolution Rutherford backscattering spectroscopy and elastic recoil detection analysis profiles. The overall results confirm that the use of EXLIE conditions minimizes near surface (depth &amp;lt;5 nm) artifacts but data quantification still requires dedicated postanalysis data treatment to take into account matrix effects between Si and SiO2.</jats:p>",
  "DOI": "10.1116/1.3225588",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2010,
        3,
        1
      ]
    ],
    "date-time": "2010-03-01T23:00:44Z",
    "timestamp": 1267484444000
  },
  "page": "C1C48-C1C53",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 15,
  "title": "Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants",
  "prefix": "10.1116",
  "volume": "28",
  "author": [
    {
      "given": "A.",
      "family": "Merkulov",
      "sequence": "first",
      "affiliation": [
        {
          "name": "CAMECA SAS , 29 Quai des Gr\u00e9sillons, 92622 Gennevilliers Cedex, France"
        }
      ]
    },
    {
      "given": "P.",
      "family": "Peres",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CAMECA SAS , 29 Quai des Gr\u00e9sillons, 92622 Gennevilliers Cedex, France"
        }
      ]
    },
    {
      "given": "S.",
      "family": "Choi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CAMECA SAS , 29 Quai des Gr\u00e9sillons, 92622 Gennevilliers Cedex, France"
        }
      ]
    },
    {
      "given": "F.",
      "family": "Horreard",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CAMECA SAS , 29 Quai des Gr\u00e9sillons, 92622 Gennevilliers Cedex, France"
        }
      ]
    },
    {
      "given": "H.-U.",
      "family": "Ehrke",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CAMECA GmbH , Edisonstr. 3, 85716 Unterschleissheim/Munich, Germany"
        }
      ]
    },
    {
      "given": "N.",
      "family": "Loibl",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CAMECA GmbH , Edisonstr. 3, 85716 Unterschleissheim/Munich, Germany"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Schuhmacher",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "CAMECA SAS , 29 Quai des Gr\u00e9sillons, 92622 Gennevilliers Cedex, France"
        }
      ]
    }
  ],
  "member": "20",
  "published-online": {
    "date-parts": [
      [
        2010,
        3,
        1
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070921405646400_c1",
      "first-page": "805",
      "volume-title": "Appl. Surf. Sci.",
      "year": "2007"
    },
    {
      "key": "2023070921405646400_c2",
      "first-page": "533",
      "year": "1999"
    },
    {
      "key": "2023070921405646400_c3",
      "first-page": "1606",
      "volume-title": "Appl. Surf. Sci.",
      "year": "2007"
    },
    {
      "key": "2023070921405646400_c4",
      "doi-asserted-by": "publisher",
      "first-page": "640",
      "DOI": "10.1016/j.apsusc.2004.03.130",
      "volume": "231\u2013232",
      "year": "2004",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023070921405646400_c5",
      "doi-asserted-by": "publisher",
      "first-page": "826",
      "DOI": "10.1002/sia.2597",
      "volume": "39",
      "year": "2007",
      "journal-title": "Surf. Interface Anal."
    },
    {
      "key": "2023070921405646400_c6",
      "first-page": "7215",
      "volume-title": "Appl. Surf. Sci.",
      "year": "2005"
    }
  ],
  "container-title": "Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/28/1/C1C48/13927196/c1c48_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jvb/article-pdf/28/1/C1C48/13927196/c1c48_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        9
      ]
    ],
    "date-time": "2023-07-09T21:41:04Z",
    "timestamp": 1688938864000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jvb/article/28/1/C1C48/467809/Advanced-secondary-ion-mass-spectroscopy"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2010,
        1,
        1
      ]
    ]
  },
  "references-count": 6,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          2010,
          1,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.3225588",
  "relation": {},
  "ISSN": [
    "2166-2746",
    "2166-2754"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2010,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2010,
        1,
        1
      ]
    ]
  }
}