DOI: 10.1116/1.2110371. Sn O 2 lithographic processing for nanopatterned gas sensors

Sn O 2 lithographic processing for nanopatterned gas sensors

10.1116/1.2110371

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (20)

Abstract

Tin dioxide (SnO2) is widely used as sensing material in metal-oxides gas sensors. In this work we present two lithographic approaches for SnO2 patterning, an additive process and a subtractive one. In the first case patterns of SnO2 nanowires are successfully fabricated and exploited as sensing element in working devices; responses to several testing gases are satisfactorily improved with respect to continuous film devices. Regarding the subtractive process, we present reactive ion etching of SnO2 based on CF4∕H2 gas mixture. Dependence of etch rate upon H2 concentration and effects due to Ar additions to plasma are investigated; results are discussed and a possible etching reaction is proposed, but further developments are required to increase the etch rate.

Bibliography

Candeloro, P., Comini, E., Baratto, C., Faglia, G., Sberveglieri, G., Kumar, R., Carpentiero, A., & Fabrizio, E. D. (2005). Sn O 2 lithographic processing for nanopatterned gas sensors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 23(6), 2784â2788.

Authors 8

P. Candeloro (first)
E. Comini (additional)
C. Baratto (additional)
G. Faglia (additional)
G. Sberveglieri (additional)
R. Kumar (additional)
A. Carpentiero (additional)
E. Di Fabrizio (additional)

References 16 Referenced 18

10.1002/j.1538-7305.1953.tb01420.x / Bell Syst. Tech. J. (1953)
10.1088/0953-8984/15/20/201 / J. Phys.: Condens. Matter (2003)
10.1063/1.373782 / J. Appl. Phys. (2000)
10.1016/0925-4005(95)85051-1 / Sens. Actuators B (1995)
10.1016/0925-4005(94)01278-P / Sens. Actuators B (1995)
10.1016/0925-4005(96)01822-9 / Sens. Actuators B (1991)
10.1063/1.1504867 / Appl. Phys. Lett. (2002)
10.1063/1.1545166 / Appl. Phys. Lett. (2003)
10.1016/S0925-4005(02)00006-0 / Sens. Actuators B (2002)
{'key': '2023080209213163300_c10'}
{'key': '2023080209213163300_c11', 'volume-title': 'Semiconductor Electrodes', 'author': 'Finklea', 'year': '1988'} / Semiconductor Electrodes by Finklea (1988)
{'key': '2023080209213163300_c12', 'volume-title': 'CRC Handbook of Chemistry and Physics', 'year': '1991', 'edition': '72nd ed.'} / CRC Handbook of Chemistry and Physics (1991)
{'key': '2023080209213163300_c13', 'first-page': '679', 'volume': '75', 'year': '2001', 'journal-title': 'Russ. J. Phys. Chem.'} / Russ. J. Phys. Chem. (2001)
{'key': '2023080209213163300_c14', 'volume-title': 'Dry Etching for VLSI', 'author': 'Dobson', 'year': '1991'} / Dry Etching for VLSI by Dobson (1991)
10.1016/S0925-4005(99)00094-5 / Sens. Actuators B (1999)
10.1016/S0040-6090(97)00219-8 / Thin Solid Films (1997)

Dates

Type	When
Created	19 years, 7 months ago (Jan. 11, 2006, 6:25 p.m.)
Deposited	2 years, 1 month ago (Aug. 2, 2023, 5:21 a.m.)
Indexed	1 month ago (Aug. 3, 2025, 6:54 p.m.)
Issued	19 years, 10 months ago (Nov. 1, 2005)
Published	19 years, 10 months ago (Nov. 1, 2005)
Published Online	19 years, 9 months ago (Dec. 2, 2005)
Published Print	19 years, 10 months ago (Nov. 1, 2005)

Funders 0

None

BibTeX

@article{Candeloro_2005, title={Sn O 2 lithographic processing for nanopatterned gas sensors}, volume={23}, ISSN={1520-8567}, url={http://dx.doi.org/10.1116/1.2110371}, DOI={10.1116/1.2110371}, number={6}, journal={Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena}, publisher={American Vacuum Society}, author={Candeloro, P. and Comini, E. and Baratto, C. and Faglia, G. and Sberveglieri, G. and Kumar, R. and Carpentiero, A. and Fabrizio, E. Di}, year={2005}, month=nov, pages={2784–2788} }

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