DOI: 10.1116/1.1784826. Sub-100°C a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics

Sub-100°C a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics

10.1116/1.1784826

Crossref journal-article

American Vacuum Society

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (20)

Abstract

Fabrication on thin-film transistors (TFTs) on flexible plastic substrates for large-area imagers and displays has been made possible by lowering the deposition temperatures, which reduces the thermal deformation of plastic substrates, greatly facilitating substrate preparation and device patterning. Furthermore, at extremely low deposition temperatures, much wider variety of low-cost substrates, plastics or otherwise, are available for use. In this article, we report on a-Si:H TFTs fabricated at 75°C on glass and plastic substrates. The TFTs were fabricated using inverted–staggered topology, in a full wet etch process. The TFT structures consisted of 140nm of sputtered Mo for gate, 380nm of plasma-enhanced chemical vapor deposition (PECVD) a-SiNx:H gate dielectric optimized for 75°C, 50nm of PECVD a-Si:H channel material, 50nm of PECVD n+ a-Si:H for source∕drain contacts, and sputtered Al for contact metallization. Current–voltage characteristics were measured, and relevant transistor parameters were calculated. TFTs exhibited the leakage current below 10−12A, and on∕off current ratio exceeding 105. The results were compared to those for high temperature a-Si:H TFTs, and the differences are discussed.

Bibliography

Sazonov, A., & McArthur, C. (2004). Sub-100Â°Câa-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 22(5), 2052â2055.

Authors 2

A. Sazonov (first)
C. McArthur (additional)

References 18 Referenced 26

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Dates

Type	When
Created	20 years, 10 months ago (Oct. 5, 2004, 9:42 a.m.)
Deposited	2 years, 1 month ago (Aug. 1, 2023, 8:34 p.m.)
Indexed	4 months, 3 weeks ago (April 11, 2025, 12:57 a.m.)
Issued	21 years ago (Sept. 1, 2004)
Published	21 years ago (Sept. 1, 2004)
Published Online	20 years, 11 months ago (Sept. 23, 2004)
Published Print	21 years ago (Sept. 1, 2004)

Funders 0

None

BibTeX

@article{Sazonov_2004, title={Sub-100°C a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics}, volume={22}, ISSN={1520-8559}, url={http://dx.doi.org/10.1116/1.1784826}, DOI={10.1116/1.1784826}, number={5}, journal={Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, publisher={American Vacuum Society}, author={Sazonov, A. and McArthur, C.}, year={2004}, month=sep, pages={2052–2055} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        11
      ]
    ],
    "date-time": "2025-04-11T04:57:13Z",
    "timestamp": 1744347433638
  },
  "reference-count": 18,
  "publisher": "American Vacuum Society",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2004,
        9,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Fabrication on thin-film transistors (TFTs) on flexible plastic substrates for large-area imagers and displays has been made possible by lowering the deposition temperatures, which reduces the thermal deformation of plastic substrates, greatly facilitating substrate preparation and device patterning. Furthermore, at extremely low deposition temperatures, much wider variety of low-cost substrates, plastics or otherwise, are available for use. In this article, we report on a-Si:H TFTs fabricated at 75\u00b0C on glass and plastic substrates. The TFTs were fabricated using inverted\u2013staggered topology, in a full wet etch process. The TFT structures consisted of 140nm of sputtered Mo for gate, 380nm of plasma-enhanced chemical vapor deposition (PECVD) a-SiNx:H gate dielectric optimized for 75\u00b0C, 50nm of PECVD a-Si:H channel material, 50nm of PECVD n+\u2008a-Si:H for source\u2215drain contacts, and sputtered Al for contact metallization. Current\u2013voltage characteristics were measured, and relevant transistor parameters were calculated. TFTs exhibited the leakage current below 10\u221212A, and on\u2215off current ratio exceeding 105. The results were compared to those for high temperature a-Si:H TFTs, and the differences are discussed.</jats:p>",
  "DOI": "10.1116/1.1784826",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2004,
        10,
        5
      ]
    ],
    "date-time": "2004-10-05T13:42:10Z",
    "timestamp": 1096983730000
  },
  "page": "2052-2055",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 26,
  "title": "Sub-100\u00b0C\u2008a-Si:H thin-film transistors on plastic substrates with silicon nitride gate dielectrics",
  "prefix": "10.1116",
  "volume": "22",
  "author": [
    {
      "given": "A.",
      "family": "Sazonov",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Electrical and Computer Engineering Department , University of Waterloo, Waterloo, Ontario N2L 3G1, Canada"
        }
      ]
    },
    {
      "given": "C.",
      "family": "McArthur",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Electrical and Computer Engineering Department , University of Waterloo, Waterloo, Ontario N2L 3G1, Canada"
        }
      ]
    }
  ],
  "member": "20",
  "published-online": {
    "date-parts": [
      [
        2004,
        9,
        23
      ]
    ]
  },
  "reference": [
    {
      "key": "2023080200343734700_c1",
      "first-page": "26",
      "volume": "6",
      "year": "2003",
      "journal-title": "Inf. Disp."
    },
    {
      "key": "2023080200343734700_c2",
      "first-page": "42",
      "volume": "49",
      "year": "2003",
      "journal-title": "IEE Rev."
    },
    {
      "key": "2023080200343734700_c3",
      "first-page": "856",
      "year": "2003"
    },
    {
      "key": "2023080200343734700_c4",
      "first-page": "12",
      "volume": "175\u2013176",
      "year": "2001",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023080200343734700_c5",
      "doi-asserted-by": "publisher",
      "first-page": "683",
      "DOI": "10.1116/1.591259",
      "volume": "18",
      "year": "2000",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023080200343734700_c6",
      "first-page": "1329",
      "volume": "266\u2013269",
      "year": "2000",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2023080200343734700_c7",
      "doi-asserted-by": "publisher",
      "first-page": "240",
      "DOI": "10.1117/12.472297",
      "volume": "4688",
      "year": "2002",
      "journal-title": "Proc. SPIE"
    },
    {
      "key": "2023080200343734700_c8",
      "doi-asserted-by": "crossref",
      "first-page": "79",
      "DOI": "10.1007/978-1-4615-0397-2",
      "volume-title": "Thin Film Transistors, Materials and Processes",
      "author": "Kuo",
      "year": "2004"
    },
    {
      "key": "2023080200343734700_c9",
      "doi-asserted-by": "publisher",
      "first-page": "2227",
      "DOI": "10.1109/TED.2003.818156",
      "volume": "50",
      "year": "2003",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023080200343734700_c10",
      "first-page": "165",
      "volume": "769",
      "year": "2003",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2023080200343734700_c11",
      "first-page": "303",
      "volume": "769",
      "year": "2003",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2023080200343734700_c12",
      "first-page": "D",
      "volume": "685",
      "year": "2001",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2023080200343734700_c13",
      "first-page": "1360",
      "volume": "299\u2013302",
      "year": "2002",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2023080200343734700_c14",
      "doi-asserted-by": "publisher",
      "first-page": "2499",
      "DOI": "10.1109/16.43673",
      "volume": "36",
      "year": "1989",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023080200343734700_c15",
      "doi-asserted-by": "publisher",
      "first-page": "1674",
      "DOI": "10.1063/1.112882",
      "volume": "65",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080200343734700_c16",
      "first-page": "679",
      "volume": "715",
      "year": "2002",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2023080200343734700_c17",
      "doi-asserted-by": "publisher",
      "first-page": "473",
      "DOI": "10.1109/55.784456",
      "volume": "20",
      "year": "1999",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023080200343734700_c18",
      "doi-asserted-by": "publisher",
      "first-page": "741",
      "DOI": "10.1016/S0042-207X(98)00282-6",
      "volume": "51",
      "year": "1998",
      "journal-title": "Vacuum"
    }
  ],
  "container-title": "Journal of Vacuum Science &amp; Technology A: Vacuum, Surfaces, and Films",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/22/5/2052/14778459/2052_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/avs/jva/article-pdf/22/5/2052/14778459/2052_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        8,
        2
      ]
    ],
    "date-time": "2023-08-02T00:34:48Z",
    "timestamp": 1690936488000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jva/article/22/5/2052/939677/Sub-100-C-a-Si-H-thin-film-transistors-on-plastic"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2004,
        9,
        1
      ]
    ]
  },
  "references-count": 18,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          2004,
          9,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1116/1.1784826",
  "relation": {},
  "ISSN": [
    "0734-2101",
    "1520-8559"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2004,
        9
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2004,
        9,
        1
      ]
    ]
  }
}